GaN Systems’ EZDrive(SM) circuit is a low cost, easy way to implement a GaN driving circuit. It is adaptable to any power level, any frequency, and any LLC and PFC controller. The EZDrive(SM) circuit provides design control for the optimization of efficiency and EMI.

The EZDrive(SM) circuit allows the use of a standard MOSFET controller with integrated driver to drive GaN Systems’ E-HEMTs. The table below summarizes the advantages of this circuit.

Application Considerations Silicon MOSFETs Monolithic-integrated Driver GaN GaN Systems E-HEMTs
Total BoM Cost Lowest Highest Low
Choice of devices to optimize design Widest Narrow Wide range from 25 mΩ to 500 mΩ
Utilize controller driver, eliminate driver redundancy, ease-of-use Driver integrated in controller; No redundant drivers Driver integrated in controller; Redundant drivers in GaN device Driver integrated in controller; No redundant drivers
EMI control Adjustable EMI control with gate resistor R(G) Fixed – cannot control turn-off slew rate Adjustable EMI control with gate resistor R(G)
Power density Low High High
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