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GS-065-150-1-D: 650V Enhancement Mode GaN Transistor

2019-05-19T14:59:53-05:00May 19th, 2019|Categories: Featured, GaN Power Transistors, GaN Systems|Tags: |

The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.

Wolfspeed KIT-CRD-3DD12P: Buck Boost Evaluation Board

2019-05-19T10:51:18-05:00May 19th, 2019|Categories: Featured, Silicon Carbide Test & Evaluation Products, Wolfspeed|

The CRD3DD12P buck boost evaluation kit is optimized to demonstrate the high-speed switching capability of Wolfspeed’s 3rd Generation (C3M) silicon carbide (SiC) MOSFETs. The board features SMA connectors for monitoring the gate to source voltage. The SMA connectors offer much cleaner waveforms than traditional probes and ground leads. This evaluation kit supports 4-lead and 3-lead

PSDwebcast on Dynamic Rds(on) Effect on Total System Losses with GaN (May 16)

2019-05-01T12:14:55-05:00May 1st, 2019|Categories: Events, Featured, GaN Systems, Webinar|Tags: |

With GaN power semiconductors, previously unthinkable system innovation is now possible in diverse power-reliant industries. Reimagining the role of power in products and entire systems can impact both the immediate bottom line and long-term business competitiveness. GaN power transistors are the building blocks of change for the design of a new generation of smaller,

Visit Richardson RFPD at PCIM 2019 (May 7-9)

2019-05-01T11:53:28-05:00April 25th, 2019|Categories: Events, Featured, Tradeshow|Tags: |

Enter now for a chance to win select GaN, SiC or gate driver evaluation products Richardson RFPD is giving away one of the evaluation products to five individuals selected in our drawing from this form and those visiting us at Hall 6, Stand #329 at PCIM 2019 in Nuremberg, Germany. As power conversion

The Challenges of Using SiC MOSFET-Based Power Modules for Solar Inverters

2019-05-03T16:05:06-05:00April 18th, 2019|Categories: Article, Featured, Vincotech|Tags: |

This article examines SiC MOSFETs as a viable option for meeting the rising demand for faster switching and greater efficiency in 1500 V solar applications. It looks at their benefits – SiC MOSFETs enable deeper integration and greater power density – and their drawbacks in terms of switching performance. The intrinsic properties of the

Webinar: Electric Vehicle Fast Charging SiC Solutions – Design, Development, Optimization (Update: Available On-Demand!)

2019-05-01T11:52:02-05:00April 4th, 2019|Categories: Events, Featured, Webinar, Wolfspeed|Tags: |

Silicon Carbide devices are enabling the future of power electronics. This webinar will focus on how SiC MOSFETs and Schottky Diodes improve efficiency, reduce system size/weight, and reduce overall system cost for electric vehicle fast chargers. This webinar will focus on how Silicon Carbide enables fast chargers for electric vehicles: Requirements for electric vehicle

Updated! GaN and SiC Evaluation Kits & Reference Designs

2019-04-04T12:27:30-05:00March 6th, 2018|Categories: ADI, Featured, GaN Power Transistor Test & Evaluation Products, Power Integrations, pSemi, Silicon Carbide Test & Evaluation Products|

This guide highlights our GaN & SiC evaluation boards and reference designs with links to individual web SKU pages. Includes gate driver evaluation products from ADI, pSemi and Power Integrations. DOWNLOAD NOW

Wolfspeed C3M0075120D

2019-04-04T12:21:14-05:00April 4th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with

Power Integrations SIC1182K Single-channel Gate Driver

2019-04-04T11:54:28-05:00April 4th, 2019|Categories: Featured, Gate Driver ICs, Power Integrations|

The SIC1182K is a single-channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. The SIC1182K boasts the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage requirements matching the range of

Wolfspeed 1700V C5D SiC Diodes

2019-02-23T18:11:37-05:00February 23rd, 2019|Categories: Featured, Silicon Carbide Diodes, Wolfspeed|

Optimized for high-voltage, high-power environments Wolfspeed’s 1700V Silicon Carbide (SiC) Schottky Diodes (introduced January 2019), incorporate advanced 5th-generation technology from Cree’s 150mm production facilities. With its complementary SiC MOSFETs, Wolfspeed offers the most comprehensive 1700V portfolio in the industry, enabling high efficiency and power density. The C5D family is intended to supersede the original