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Wolfspeed KIT-CRD-3DD12P: Buck Boost Evaluation Board

2019-10-16T14:01:14-05:00October 16th, 2019|Categories: Featured, Silicon Carbide Test & Evaluation Products, Wolfspeed|

The CRD3DD12P buck boost evaluation kit is optimized to demonstrate the high-speed switching capability of Wolfspeed’s 3rd Generation (C3M) silicon carbide (SiC) MOSFETs. The board features SMA connectors for monitoring the gate to source voltage. The SMA connectors offer much cleaner waveforms than traditional probes and ground leads. This evaluation kit supports 4-lead and 3-lead

Wolfspeed C3M0016120D

2019-10-12T19:04:39-05:00October 12th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. The 3rd generation planar MOSFET technology includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs

GaN Systems: GS65011-EVBEZ

2019-10-12T18:54:18-05:00October 12th, 2019|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

The GS65011-EVBEZ evaluation board allows the user to evaluate GaN Systems’ EZDrive™ circuit. EZDrive™ is a low-cost, easy way to implement a GaN driving circuit using a standard MOSFET controller with integrated driver. It is adaptable to any power level, any frequency, and any LLC and PFC controller. EZDrive™ features and benefits: Low cost

GaN is Driving Power Semiconductors

2019-10-02T16:52:19-05:00October 2nd, 2019|Categories: Article, Featured, GaN Systems|

Power semiconductor devices with gallium nitride (GaN) and silicon carbide (SiC) are gradually replacing their silicon-based counterparts, largely because using GaN or SiC power transistors can lead to more straightforward and efficient energy storage solutions. The combined GaN and SiC market is projected to be valued at over US$3 billion by 2025 and will be

Wolfspeed C3M0021120K

2019-09-19T12:05:08-05:00September 19th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Proven and reliable 3rd generation planar MOSFET with rugged intrinsic body diode Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant

GaN Systems Spearheads Discussions on GaN Industry, Technology, and Innovation at Upcoming Global Conferences

2019-09-19T11:50:58-05:00September 19th, 2019|Categories: Events, Featured, GaN Systems, Webinar|

As GaN (gallium nitride) takes center stage in conversations around power electronics and in key energy-intensive industries, GaN Systems, the global leader in GaN power semiconductors, will deliver presentations at several conferences worldwide. Various key executives and experts will be speaking about the impact and opportunities GaN brings in improving and creating new energy efficient

Wolfspeed Webinar: October 22, 2019

2019-09-19T11:36:46-05:00September 19th, 2019|Categories: Events, Featured, Webinar, Wolfspeed|

SiC Design Tips and Tricks Upgrading your power supply design from Si to SiC can appear daunting due to the different gate drive requirements and considerations of EMI suppression and thermal properties. But in reality, you have the same design considerations as with any power supply. In this webinar we will share a few

Delphi Technologies to Partner with Cree for Automotive Silicon Carbide Devices

2019-09-16T12:29:29-05:00September 16th, 2019|Categories: Featured, News, Wolfspeed|

Innovative MOSFETS increase driving distances, shorten charging times and deliver overall improved efficiency for next generation electric vehicles DURHAM, N.C. – Delphi Technologies PLC (NYSE: DLPH), a global provider of automotive propulsion technologies, and Cree, Inc. (Nasdaq: CREE), a leader in silicon carbide semiconductors, announce a partnership to utilize silicon carbide semiconductor device technology

Using MOSFET Controllers to Drive GaN E-HEMTs

2019-08-31T16:58:35-05:00August 31st, 2019|Categories: Article, Featured, GaN Systems|

Before gallium nitride (GaN), the silicon (Si) MOSFET was the standard for power in adapter applications for decades. As a result, many of the existing controllers in the marketplace, including power factor correction (PFC) and DC-DC controllers, have already integrated silicon drivers into the controller chip. These controllers have proven to be a cost-effective and