This Mitsubishi Electric presentation at Power Conference 2019 covered SiC power devices, including Mitsubishi's 2nd gen 6.5kV SBD-embedded SiC MOSFETs, as well as milestones, applications and the outlook for SiC's expansion. LEARN MORE!
At Power Conference 2019, GaN Systems presented "Transforming the World with Smaller, Lower Cost, More Efficient Power Electronics," featuring: GaN Systems' product portfolio of GaN power transistors The growth in consumer, enterprise, renewable energy, industrial and EV markets A range of evaluation boards Overview of how customers in multiple applications are reaping the benefits
This Wolfspeed presentation from Power Conference 2019 is entitled "Enabling and Expanding Broader Power Markets with Wolfspeed Silicon Carbide." Key takeaways include: SiC-based solutions are proven to have higher efficiency, power density, and system cost effectiveness than traditional Si-based solutions Wolfspeed is proven to be the worldwide leader in SiC power semiconductors and is
This Tamura presentation from Power Conference 2019 highlights their high-capacity IGBT compatible gate driver and includes:Product featuresGate Driver differences (SiC and IGBT)New IGBT power module switching test dataProducts Line-up LEARN MORE!
In this presentation from Power Conference 2019, AgileSwitch highlights its software configurable gate driver ecosystem that reduces time-to-market. LEARN MORE!
The 62mm Electrical Master is a 2-Channel Gate Driver Board for 1.2kV 62MM, D3, SP6 SiC modules. These Plug and Play Gate Driver Boards feature Augmented Switching™ control, robust short circuit protection and are fully software configurable. Optimized for Heavy Duty Vehicle, Auxiliary Power Unit, Charging, Storage, Inverters and Induction Heating applications, these Gate Driver
GaN Systems looks at the game-changing technologies associated with power electronics In this eBook, you'll learn more about: The top technology trends in power electronics for 2020 How GaN technology will play a role in these trends How the demand for both data and energy are increasing at unprecedented levels New ways of addressing
16 A, 650 V, Z-Rec® Schottky, TO-247-3 package BENEFITS INCLUDE: Replace bipolar with unipolar rectifiers Essentially no switching losses Higher efficiency Reduction of heat-sink requirements Parallel devices without thermal runaway FEATURES INCLUDE: 650-volt Schottky rectifier Zero reverse recovery current Zero forward recovery voltage High-frequency operation
Imagine a factory floor with fast wireless charging pads or stations that doesn’t require a human operator to make a physical connection and placed strategically around a facility to enable maximum uptime... Read More!
GaN Systems recently announced that SPARX Group “Mirai Creation Fund II has made an investment in GaN Systems. Mirai fund provides capital to companies with the goal of accelerating innovation, Vehicle Electrification being one of the major targets, to generate a “new power” that will shape the future and impact our world. The goals and