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Wolfspeed 1700V C5D SiC Diodes

2019-02-23T18:11:37-05:00February 23rd, 2019|Categories: Featured, Silicon Carbide Diodes, Wolfspeed|

Optimized for high-voltage, high-power environments Wolfspeed’s 1700V Silicon Carbide (SiC) Schottky Diodes (introduced January 2019), incorporate advanced 5th-generation technology from Cree’s 150mm production facilities. With its complementary SiC MOSFETs, Wolfspeed offers the most comprehensive 1700V portfolio in the industry, enabling high efficiency and power density. The C5D family is intended to supersede the original

50W, 100W & 300W Power Amplifier Evaluation Boards for Wireless Power Transfer

2019-03-07T17:21:14-05:00March 5th, 2019|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|Tags: |

GaN Systems has introduced two wireless power amplifiers for the wireless charging market: The 50 W power amplifier (GSWP050W-EVBPA) is the latest addition to GaN Systems' WPT line-up. It's well-suited for wireless power and charging applications in consumer, industrial and automotive markets. The 100 W power amplifier (GSWP100W-EVBPA) is ideal for applications in the

New Family of 650 V GaN E-HEMTs from GaN Systems

2019-03-05T18:51:30-05:00March 5th, 2019|Categories: Featured, GaN Power Transistors, GaN Systems|Tags: |

The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature: Industry standard 5 mm x 6 mm PDFN packages Assembly using standard SMT process Scalable: 3.5 A to 11 A in the same footprint Fast, clean switching speed High switching frequency (20 MHz+) Low switching losses

Application Note: EZDrive Solution for GaN Systems’ E-HEMT

2019-03-01T16:22:48-05:00March 1st, 2019|Categories: Application Note, Featured, GaN Systems|Tags: |

GaN Systems' EZDrive(SM) circuit is a low cost, easy way to implement a GaN driving circuit. It is adaptable to any power level, any frequency, and any LLC and PFC controller. The EZDrive(SM) circuit provides design control for the optimization of efficiency and EMI. The EZDrive(SM) circuit allows the use of a standard MOSFET

Reduce Size and Increase Efficiency with GaN-based LLC Solution

2019-02-17T17:14:09-05:00February 17th, 2019|Categories: Article, Featured, GaN Systems|Tags: |

GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS. Therefore, GaN HEMTs show significant advantages over Silicon MOSFETs in high-frequency soft-switching resonant topologies such as an LLC resonant converter. With increased switching

MSCSICPFC/REF5: Vienna Power Factor Correction (PFC) Reference Design

2019-02-17T14:05:59-05:00February 17th, 2019|Categories: Featured, Microsemi, Silicon Carbide Test & Evaluation Products|

The MSCSICPFC/REF5 is a three-phase Vienna PFC reference design for hybrid electric vehicle (HEV)/electric vehicle (EV) charger and high power switch mode power supply applications. This reference design achieves 98.5% efficiency at 20 kW output power and is capable of operation to 30 kW. Key features of this three-phase Vienna rectifier reference design: Initial

CRD-06600FF10N: 6.6 kW Bi-Directional EV On-Board Charger

2019-02-17T21:35:14-05:00February 17th, 2019|Categories: Featured, Silicon Carbide Test & Evaluation Products, Wolfspeed|

E-Series in Action: Wolfspeed Reference Designs CRD-06600FF10N: 6.6kW Bi-Directional EV On-Board Charger Demonstration of 1000 V, 65 mΩ third generation SiC MOSFET in a 6.6 kW Bi-Directional EV On-Board Charger Features include: 6.6 kW Bi-Directional EV On-Board Charger demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC

TechDay: GaN Con – Power GaN: from promises to possible market explosion

2019-02-05T18:09:01-05:00February 5th, 2019|Categories: Events, Featured|Tags: |

Today, it is crystal-clear that, GaN offers fantastic technical advantages over traditional Si MOSFETs. Even though the current GaN power market remains tiny compared to $32.8B silicon power market, GaN devices are penetrating steadily into different applications. In this conference we will address GaN market and technology status and debate on its future evolution

C2M0045170P: Silicon Carbide Power MOSFET

2019-02-07T15:19:16-05:00February 7th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

C2M Planar MOSFET Technology / N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin