Reduce Size and Increase Efficiency with GaN-based LLC Solution

2019-02-17T17:14:09-05:00February 17th, 2019|Categories: Article, Featured, GaN Systems|Tags: |

GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS. Therefore, GaN HEMTs show significant advantages over Silicon MOSFETs in high-frequency soft-switching resonant topologies such as an LLC resonant converter. With increased switching