Imagine a factory floor with fast wireless charging pads or stations that doesn’t require a human operator to make a physical connection and placed strategically around a facility to enable maximum uptime... Read More!
Range anxiety and charger availability have long been the main hurdles to the adoption of electric vehicles. But even as car makers have demonstrated their batteries can go longer distances and charging stations have proliferated, challenges with EV charging remain as well as opportunities to load balance power grids... Read More!
Power semiconductor devices with gallium nitride (GaN) and silicon carbide (SiC) are gradually replacing their silicon-based counterparts, largely because using GaN or SiC power transistors can lead to more straightforward and efficient energy storage solutions. The combined GaN and SiC market is projected to be valued at over US$3 billion by 2025 and will be
Before gallium nitride (GaN), the silicon (Si) MOSFET was the standard for power in adapter applications for decades. As a result, many of the existing controllers in the marketplace, including power factor correction (PFC) and DC-DC controllers, have already integrated silicon drivers into the controller chip. These controllers have proven to be a cost-effective and
Benchmarking System Architectures and Topologies for DC-to-DC Converters, the Heart of Off-Board Chargers
Electrical vehicles (EVs) pose a host of questions, challenges and problems for people seeking to put this breed of car on the road. OEMs’ engineers have one set of issues to tackle, and infrastructure planners quite another, while policymakers are busy assembling the puzzle pieces of renewable energy, EVs and the smart grid. If
A four-channel laser and ultrafast driver delivers more than 480 W peak power in 2 ns pulses. The driving force behind nearly all of today’s autonomous vehicles is the extraordinary, high-powered lasers driving lidar (light detection and ranging) systems. Lidar, featuring infrared lasers, navigates autonomous vehicles by creating a real-time, 3D image of the
The second of a three-part series on The Rise of GaN-Based Power Systems: Technology and Market Overview by Paul Wiener, VP Strategic Marketing, GaN Systems To read the original article in Power Electronics World, click here. Part 1 of this series exploring gallium nitride (GaN) power devices provided a brief overview of GaN technology
Industry 4.0 brings rise to an era of smart factory floors that synergize mass production capabilities with automation, robotics, and M2M communication. Modern factories and industrial spaces must be increasingly intelligent and efficient with capital, costs, and energy, whether it’s for pharmaceuticals, chemical, transportation, medical devices or fulfillment centers. However, power system design is
This article examines SiC MOSFETs as a viable option for meeting the rising demand for faster switching and greater efficiency in 1500 V solar applications. It looks at their benefits – SiC MOSFETs enable deeper integration and greater power density – and their drawbacks in terms of switching performance. The intrinsic properties of the
GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS. Therefore, GaN HEMTs show significant advantages over Silicon MOSFETs in high-frequency soft-switching resonant topologies such as an LLC resonant converter. With increased switching