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Lasers for Lidar: Monolithic multichannel laser moves automotive lidar toward practical use

2019-08-19T10:40:07-05:00August 19th, 2019|Categories: Article, Featured, GaN Systems|

A four-channel laser and ultrafast driver delivers more than 480 W peak power in 2 ns pulses. The driving force behind nearly all of today’s autonomous vehicles is the extraordinary, high-powered lasers driving lidar (light detection and ranging) systems. Lidar, featuring infrared lasers, navigates autonomous vehicles by creating a real-time, 3D image of the

The Rise of GaN-Based Power Systems, Part II

2019-08-03T18:44:18-05:00August 3rd, 2019|Categories: Article, Featured, GaN Systems|

The second of a three-part series on The Rise of GaN-Based Power Systems: Technology and Market Overview by Paul Wiener, VP Strategic Marketing, GaN Systems To read the original article in Power Electronics World, click here. Part 1 of this series exploring gallium nitride (GaN) power devices provided a brief overview of GaN technology

Power GaN Can Revolutionize the Industrial World

2019-07-31T16:49:19-05:00July 22nd, 2019|Categories: Article, Featured, GaN Systems|

Industry 4.0 brings rise to an era of smart factory floors that synergize mass production capabilities with automation, robotics, and M2M communication. Modern factories and industrial spaces must be increasingly intelligent and efficient with capital, costs, and energy, whether it’s for pharmaceuticals, chemical, transportation, medical devices or fulfillment centers. However, power system design is

The Challenges of Using SiC MOSFET-Based Power Modules for Solar Inverters

2019-07-31T16:50:56-05:00April 18th, 2019|Categories: Article, Featured, Vincotech|

This article examines SiC MOSFETs as a viable option for meeting the rising demand for faster switching and greater efficiency in 1500 V solar applications. It looks at their benefits – SiC MOSFETs enable deeper integration and greater power density – and their drawbacks in terms of switching performance. The intrinsic properties of the

Reduce Size and Increase Efficiency with GaN-based LLC Solution

2019-07-31T16:51:31-05:00February 17th, 2019|Categories: Article, Featured, GaN Systems|

GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS. Therefore, GaN HEMTs show significant advantages over Silicon MOSFETs in high-frequency soft-switching resonant topologies such as an LLC resonant converter. With increased switching