You are here:-Article

The Challenges of Using SiC MOSFET-Based Power Modules for Solar Inverters

2019-05-03T16:05:06-05:00April 18th, 2019|Categories: Article, Featured, Vincotech|Tags: |

This article examines SiC MOSFETs as a viable option for meeting the rising demand for faster switching and greater efficiency in 1500 V solar applications. It looks at their benefits – SiC MOSFETs enable deeper integration and greater power density – and their drawbacks in terms of switching performance. The intrinsic properties of the

Reduce Size and Increase Efficiency with GaN-based LLC Solution

2019-02-17T17:14:09-05:00February 17th, 2019|Categories: Article, Featured, GaN Systems|Tags: |

GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS. Therefore, GaN HEMTs show significant advantages over Silicon MOSFETs in high-frequency soft-switching resonant topologies such as an LLC resonant converter. With increased switching