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GaN Systems: GS65011-EVBEZ

2019-10-12T18:54:18-06:00October 12th, 2019|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

The GS65011-EVBEZ evaluation board allows the user to evaluate GaN Systems’ EZDrive™ circuit. EZDrive™ is a low-cost, easy way to implement a GaN driving circuit using a standard MOSFET controller with integrated driver. It is adaptable to any power level, any frequency, and any LLC and PFC controller. EZDrive™ features and benefits: Low cost

GaN Systems: GSWPT-EVBSKY

2019-07-31T16:49:55-06:00June 15th, 2019|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

SkyCurrent III™ Charging Pad Dual-mode flexibility - The dual-mode charging pad supports both AirFuel’s Magnetic Resonant (MR) and WPC’s Qi charging standard. Fully documented reference design SkyCurrentTM Receiving units: Optimized Magnetic Resonant-enabled receiving units Multiple Wireless Charging Proof Points: BluetoothTM Enabled Speaker Personal headset LED light Read More!

Updated! GaN and SiC Evaluation Kits & Reference Designs

2019-04-04T12:27:30-06:00March 6th, 2018|Categories: ADI, Featured, GaN Power Transistor Test & Evaluation Products, Power Integrations, pSemi, Silicon Carbide Test & Evaluation Products|

This guide highlights our GaN & SiC evaluation boards and reference designs with links to individual web SKU pages. Includes gate driver evaluation products from ADI, pSemi and Power Integrations. DOWNLOAD NOW

50W, 100W & 300W Power Amplifier Evaluation Boards for Wireless Power Transfer

2019-07-31T16:51:13-06:00March 5th, 2019|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GaN Systems has introduced two wireless power amplifiers for the wireless charging market: The 50 W power amplifier (GSWP050W-EVBPA) is the latest addition to GaN Systems' WPT line-up. It's well-suited for wireless power and charging applications in consumer, industrial and automotive markets. The 100 W power amplifier (GSWP100W-EVBPA) is ideal for applications in the

GaN Systems 6.78 MHz Wireless Power Transfer PA Evaluation Boards

2018-08-28T13:56:55-06:00August 19th, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GSWP100WP-EVBPA: 100 W, 6.78 MHz Class EF2 PA for WPT 100 W Power Amplifier for Wireless Power Applications Push-Pull Class EF2 topology GaN Systems’ GS61008P 100 V / 90 A / 7 mΩ E-HEMTs Features 6.78 MHz frequency Up to 100 W transmit output power >90% peak efficiency Configurable: voltage mode, current mode, single

GaN E-HEMT Drivers with Switching Speeds up to 40 MHz

2018-09-13T14:17:18-06:00September 10th, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, Gate Drivers, pSemi|

GaN E-HEMT Drivers pSemi's UltraCMOS® technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. This speed advantage results in significantly smaller power converters, which benefits the design engineer with increased power density. With a switching frequency up to 40 MHz, pSemi’s GaN drivers deliver the industry’s fastest switching speeds,

GaN Systems IMS Evaluation Platform

2018-07-29T13:59:20-06:00April 2nd, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GaN Systems' Insulated Metal Substrate (IMS) Evaluation Platform provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination with GaNPX packaging technology and smart design techniques, enables power engineers to quickly take full advantage of GaN power transistors in designing

pSemi PE29102: GaN Power Transistor Evaluation Board

2018-07-29T14:02:56-06:00March 31st, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, pSemi|

The PE29102/GS61004B evaluation board allows the user to evaluate the PE29102 gate driver in a full-bridge configuration. The PE29102 integrated high-speed driver is designated to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second