The GS65011-EVBEZ evaluation board allows the user to evaluate GaN Systems’ EZDrive™ circuit. EZDrive™ is a low-cost, easy way to implement a GaN driving circuit using a standard MOSFET controller with integrated driver. It is adaptable to any power level, any frequency, and any LLC and PFC controller. EZDrive™ features and benefits: Low cost
SkyCurrent III™ Charging Pad Dual-mode flexibility - The dual-mode charging pad supports both AirFuel’s Magnetic Resonant (MR) and WPC’s Qi charging standard. Fully documented reference design SkyCurrentTM Receiving units: Optimized Magnetic Resonant-enabled receiving units Multiple Wireless Charging Proof Points: BluetoothTM Enabled Speaker Personal headset LED light Read More!
This guide highlights our GaN & SiC evaluation boards and reference designs with links to individual web SKU pages. Includes gate driver evaluation products from ADI, pSemi and Power Integrations. DOWNLOAD NOW
GaN Systems has introduced two wireless power amplifiers for the wireless charging market: The 50 W power amplifier (GSWP050W-EVBPA) is the latest addition to GaN Systems' WPT line-up. It's well-suited for wireless power and charging applications in consumer, industrial and automotive markets. The 100 W power amplifier (GSWP100W-EVBPA) is ideal for applications in the
GSWP100WP-EVBPA: 100 W, 6.78 MHz Class EF2 PA for WPT 100 W Power Amplifier for Wireless Power Applications Push-Pull Class EF2 topology GaN Systems’ GS61008P 100 V / 90 A / 7 mΩ E-HEMTs Features 6.78 MHz frequency Up to 100 W transmit output power >90% peak efficiency Configurable: voltage mode, current mode, single
GaN E-HEMT Drivers pSemi's UltraCMOS® technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. This speed advantage results in significantly smaller power converters, which benefits the design engineer with increased power density. With a switching frequency up to 40 MHz, pSemi’s GaN drivers deliver the industry’s fastest switching speeds,
GaN Systems' Insulated Metal Substrate (IMS) Evaluation Platform provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination with GaNPX packaging technology and smart design techniques, enables power engineers to quickly take full advantage of GaN power transistors in designing
The PE29102/GS61004B evaluation board allows the user to evaluate the PE29102 gate driver in a full-bridge configuration. The PE29102 integrated high-speed driver is designated to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second