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50W, 100W & 300W Power Amplifier Evaluation Boards for Wireless Power Transfer

2019-03-07T17:21:14-05:00March 5th, 2019|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|Tags: |

GaN Systems has introduced two wireless power amplifiers for the wireless charging market: The 50 W power amplifier (GSWP050W-EVBPA) is the latest addition to GaN Systems' WPT line-up. It's well-suited for wireless power and charging applications in consumer, industrial and automotive markets. The 100 W power amplifier (GSWP100W-EVBPA) is ideal for applications in the

New Family of 650 V GaN E-HEMTs from GaN Systems

2019-03-05T18:51:30-05:00March 5th, 2019|Categories: Featured, GaN Power Transistors, GaN Systems|Tags: |

The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature: Industry standard 5 mm x 6 mm PDFN packages Assembly using standard SMT process Scalable: 3.5 A to 11 A in the same footprint Fast, clean switching speed High switching frequency (20 MHz+) Low switching losses

Application Note: EZDrive Solution for GaN Systems’ E-HEMT

2019-03-01T16:22:48-05:00March 1st, 2019|Categories: Application Note, Featured, GaN Systems|Tags: |

GaN Systems' EZDrive(SM) circuit is a low cost, easy way to implement a GaN driving circuit. It is adaptable to any power level, any frequency, and any LLC and PFC controller. The EZDrive(SM) circuit provides design control for the optimization of efficiency and EMI. The EZDrive(SM) circuit allows the use of a standard MOSFET

Reduce Size and Increase Efficiency with GaN-based LLC Solution

2019-02-17T17:14:09-05:00February 17th, 2019|Categories: Article, Featured, GaN Systems|Tags: |

GaN High Electron Mobility Transistors (GaN HEMT) have lower driving loss and shorter deadtime circuit benefits due to significantly reduced gate charge (Qg) and output capacitance (Coss) compared to Silicon MOSFETS. Therefore, GaN HEMTs show significant advantages over Silicon MOSFETs in high-frequency soft-switching resonant topologies such as an LLC resonant converter. With increased switching

GaN Systems 6.78 MHz Wireless Power Transfer PA Evaluation Boards

2018-08-28T13:56:55-05:00August 19th, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GSWP100WP-EVBPA: 100 W, 6.78 MHz Class EF2 PA for WPT 100 W Power Amplifier for Wireless Power Applications Push-Pull Class EF2 topology GaN Systems’ GS61008P 100 V / 90 A / 7 mΩ E-HEMTs Features 6.78 MHz frequency Up to 100 W transmit output power >90% peak efficiency Configurable: voltage mode, current mode, single

GaN Systems GS-010-120-1-P GaN Power Transistor

2018-07-25T09:31:22-05:00June 7th, 2018|Categories: Featured, GaN Power Transistors, GaN Systems|

The GS-010-120-1-P is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-010-120-1-P is a

GaN Systems IMS Evaluation Platform

2018-07-29T13:59:20-05:00April 2nd, 2018|Categories: Featured, GaN Power Transistor Test & Evaluation Products, GaN Systems|

GaN Systems' Insulated Metal Substrate (IMS) Evaluation Platform provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination with GaNPX packaging technology and smart design techniques, enables power engineers to quickly take full advantage of GaN power transistors in designing