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MSCSICPFC/REF5: Vienna Power Factor Correction (PFC) Reference Design

2019-02-17T14:05:59-05:00February 17th, 2019|Categories: Featured, Microsemi, Silicon Carbide Test & Evaluation Products|

The MSCSICPFC/REF5 is a three-phase Vienna PFC reference design for hybrid electric vehicle (HEV)/electric vehicle (EV) charger and high power switch mode power supply applications. This reference design achieves 98.5% efficiency at 20 kW output power and is capable of operation to 30 kW. Key features of this three-phase Vienna rectifier reference design: Initial

Low-Inductance SiC MOSFET Power Modules Enable Downsized Customer Equipment

2018-09-13T12:55:28-05:00September 2nd, 2018|Categories: Featured, Microsemi, Silicon Carbide Power Transistors & Modules|

Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form

Board Level Heat Sinks

2018-10-10T15:16:24-05:00July 20th, 2018|Categories: Board Level Heat Sinks, Featured, Microsemi, Ohmite, Wakefield-Vette|

Typically, one board level heat sink is used to increase the surface area available for heat transfer from an individual low- to medium-power semiconductor device, thus reducing the temperature of both its external case and its internal junction. The add-on heat sink allows the semiconductor device to perform at or near its highest level,

Next-generation SiC Schottky Diodes from Microsemi

2018-07-14T17:04:02-05:00June 3rd, 2018|Categories: Featured, Microsemi, Silicon Carbide Diodes|

The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high voltage applications. Part # Voltage (V) Current (A) Configuration Package MSC010SDA070K 700 10 Single TO-220 MSC010SDA120B 1200 10 Single TO-247-2 MSC010SDA120K 1200 10 Single TO-220

ADI – Microsemi SIC Module Evaluation Board

2018-07-29T13:57:21-05:00May 21st, 2018|Categories: ADI, Featured, Microsemi, Silicon Carbide Test & Evaluation Products|

High power evaluation board, up to 1200V & 50A @ 200kHz switching frequency featuring the combo ADI ADuM4135 isolated gate driver + LT3999 isolated power supply controller + Microsemi SiC power module in half bridge configuration. Half Bridge Topology with SiC APTMC120AM20CT1AG Power Device 1200 V, 50 A, 200 kHz >100 kV/us CMTI 12

Microsemi SP6LI Low-inductance SiC MOSFET Power Modules

2018-05-23T20:20:55-05:00May 2nd, 2018|Categories: Featured, Microsemi, Silicon Carbide Power Transistors & Modules|

Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor,