Stepping up to peak performance and efficiency with Vincotech’s SiC-driven power modules No one has sold more SiC-driven power modules than Vincotech, and if you want to boost efficiency, then SiC components are for you – doubly so if you also want to build a smaller, lighter system while supersizing, rather than sacrificing, performance.
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can
1200 V, 450 A Silicon Carbide Module Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple and cost-effective. With half the weight and volume of a standard 62 mm module, the CAB450M12XM3 maximizes power density while minimizing loop inductance and
SiC Power MOSFET: 1200V, 16mΩ RDS[on] in TO-247-4L package Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with
C2M Planar MOSFET Technology / N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form
First Family of Silicon Carbide Devices to Meet Automotive AEC-Q101 Requirements The E-Series line of SiC MOSFETs is the Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized
SiC-driven power from Vincotech - to boost efficiency and performance for your power module. For standard and custom power modules, we offer: SiC components sourced from a range of partners Choice of Al203, AIN and Si3N4 DCB substrates Optional integrated passive capacitors and resistors Low-inductive housings LEARN MORE
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor,
