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Wolfspeed C3M0016120D

2019-10-12T19:04:39-05:00October 12th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. The 3rd generation planar MOSFET technology includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs

Wolfspeed C3M0021120K

2019-09-19T12:05:08-05:00September 19th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Proven and reliable 3rd generation planar MOSFET with rugged intrinsic body diode Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant

Vincotech: SiC-based Power Modules

2019-08-15T11:12:53-05:00August 15th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Vincotech|

Stepping up to peak performance and efficiency with Vincotech’s SiC-driven power modules No one has sold more SiC-driven power modules than Vincotech, and if you want to boost efficiency, then SiC components are for you – doubly so if you also want to build a smaller, lighter system while supersizing, rather than sacrificing, performance.

Wolfspeed C3M0032120K

2019-08-13T17:15:49-05:00August 13th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can

Wolfspeed CAB450M12XM3

2019-08-02T16:38:46-05:00June 12th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

1200 V, 450 A Silicon Carbide Module Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple and cost-effective. With half the weight and volume of a standard 62 mm module, the CAB450M12XM3 maximizes power density while minimizing loop inductance and

Wolfspeed C3M0016120K

2019-06-11T12:40:27-05:00June 11th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

SiC Power MOSFET: 1200V, 16mΩ RDS[on] in TO-247-4L package Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the

Wolfspeed C3M0075120D

2019-04-04T12:21:14-05:00April 4th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with

C2M0045170P: Silicon Carbide Power MOSFET

2019-02-07T15:19:16-05:00February 7th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

C2M Planar MOSFET Technology / N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin

Low-Inductance SiC MOSFET Power Modules Enable Downsized Customer Equipment

2018-09-13T12:55:28-05:00September 2nd, 2018|Categories: Featured, Microsemi, Silicon Carbide Power Transistors & Modules|

Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form