C2M Planar MOSFET Technology / N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form
First Family of Silicon Carbide Devices to Meet Automotive AEC-Q101 Requirements The E-Series line of SiC MOSFETs is the Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized
SiC-driven power from Vincotech - to boost efficiency and performance for your power module. For standard and custom power modules, we offer: SiC components sourced from a range of partners Choice of Al203, AIN and Si3N4 DCB substrates Optional integrated passive capacitors and resistors Low-inductive housings LEARN MORE
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor,
6.6 kW bi-directional on-board charger design targets high-efficiency, high-power density onboard charger applications. Wolfspeed’s SiC MOSFEETs in low-inductance packaging can cut switching losses and simplify designs. The 6.6 kW design features the C3M0065100K (1 kV, 65 mΩ in TO-247-4) LEARN MORE
