Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. The 3rd generation planar MOSFET technology includes a rugged intrinsic body diode which allows for 3rd quadrant operation without the need for an additional external diode. Wolfspeed has designed 3rd generation MOSFETs
Features include:Low capacitances and low gate chargeFast switching speed due to low internal gage resistance (ESR)Stable operation at high junction temperature at 175 degrees CelsiusFast and reliable body diodeSuperior avalanche ruggedness LEARN MORE
Proven and reliable 3rd generation planar MOSFET with rugged intrinsic body diode Wolfspeed extends its leadership in SiC technology by introducing the industry’s most reliable and highest performing 1200V family of power MOSFETs. Based on 3rd generation planar MOSFET technology the product includes a rugged intrinsic body diode which allows for 3rd quadrant
Stepping up to peak performance and efficiency with Vincotech’s SiC-driven power modules No one has sold more SiC-driven power modules than Vincotech, and if you want to boost efficiency, then SiC components are for you – doubly so if you also want to build a smaller, lighter system while supersizing, rather than sacrificing, performance.
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Wolfspeed continues its leadership in SiC technology by offering MOSFETs in a wide variety of on-resistances and package options, enabling designers to select the right part for their applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can
1200 V, 450 A Silicon Carbide Module Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple and cost-effective. With half the weight and volume of a standard 62 mm module, the CAB450M12XM3 maximizes power density while minimizing loop inductance and
SiC Power MOSFET: 1200V, 16mΩ RDS[on] in TO-247-4L package Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing the most advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with
C2M Planar MOSFET Technology / N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin
Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form
