The CRD3DD12P buck boost evaluation kit is optimized to demonstrate the high-speed switching capability of Wolfspeed’s 3rd Generation (C3M) silicon carbide (SiC) MOSFETs. The board features SMA connectors for monitoring the gate to source voltage. The SMA connectors offer much cleaner waveforms than traditional probes and ground leads. This evaluation kit supports 4-lead and 3-lead
This guide highlights our GaN & SiC evaluation boards and reference designs with links to individual web SKU pages. Includes gate driver evaluation products from ADI, pSemi and Power Integrations. DOWNLOAD NOW
The MSCSICPFC/REF5 is a three-phase Vienna PFC reference design for hybrid electric vehicle (HEV)/electric vehicle (EV) charger and high power switch mode power supply applications. This reference design achieves 98.5% efficiency at 20 kW output power and is capable of operation to 30 kW. Key features of this three-phase Vienna rectifier reference design: Initial
E-Series in Action: Wolfspeed Reference Designs CRD-06600FF10N: 6.6kW Bi-Directional EV On-Board Charger Demonstration of 1000 V, 65 mΩ third generation SiC MOSFET in a 6.6 kW Bi-Directional EV On-Board Charger Features include: 6.6 kW Bi-Directional EV On-Board Charger demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC
New! CRD-02AD09N: 2.2 KW, High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with Cree's (C3MTM) SiC MOSFET (TO-263-7) Highly efficient and low cost solution of bridgeless totem-pole PFC topology based on Cree’s (C3MTM) 900 V SiC MOSFET in a TO-263-7 PackageComfortably achieve Titanium standard by having 98.5 % efficiency while THD < 5% under all load
High power evaluation board, up to 1200V & 50A @ 200kHz switching frequency featuring the combo ADI ADuM4135 isolated gate driver + LT3999 isolated power supply controller + Microsemi SiC power module in half bridge configuration. Half Bridge Topology with SiC APTMC120AM20CT1AG Power Device 1200 V, 50 A, 200 kHz >100 kV/us CMTI 12
The KIT8020-CRD-5FF0917P-2 may be used to demonstrate high-speed switching performance of Cree’s 3rd Generation (C3M) silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) in a TO-247-4 package. Cree’s new TO-247-4 package provides a separate Kelvin source pin for gate drive signal return which reduces gate ringing and provides clean gate signal.