You are here:-Wolfspeed

Wolfspeed 1700V C5D SiC Diodes

2019-02-23T18:11:37-05:00February 23rd, 2019|Categories: Featured, Silicon Carbide Diodes, Wolfspeed|

Optimized for high-voltage, high-power environments Wolfspeed’s 1700V Silicon Carbide (SiC) Schottky Diodes (introduced January 2019), incorporate advanced 5th-generation technology from Cree’s 150mm production facilities. With its complementary SiC MOSFETs, Wolfspeed offers the most comprehensive 1700V portfolio in the industry, enabling high efficiency and power density. The C5D family is intended to supersede the original

CRD-06600FF10N: 6.6 kW Bi-Directional EV On-Board Charger

2019-02-17T21:35:14-05:00February 17th, 2019|Categories: Featured, Silicon Carbide Test & Evaluation Products, Wolfspeed|

E-Series in Action: Wolfspeed Reference Designs CRD-06600FF10N: 6.6kW Bi-Directional EV On-Board Charger Demonstration of 1000 V, 65 mΩ third generation SiC MOSFET in a 6.6 kW Bi-Directional EV On-Board Charger Features include: 6.6 kW Bi-Directional EV On-Board Charger demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC

C2M0045170P: Silicon Carbide Power MOSFET

2019-02-07T15:19:16-05:00February 7th, 2019|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

C2M Planar MOSFET Technology / N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin

Wolfspeed E-Series SiC MOSFETs

2018-09-18T11:01:03-05:00September 18th, 2018|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

First Family of Silicon Carbide Devices to Meet Automotive AEC-Q101 Requirements The E-Series line of SiC MOSFETs is the Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized

Wolfspeed CRD-02AD09N

2018-05-22T14:48:18-05:00May 11th, 2018|Categories: Featured, Silicon Carbide Test & Evaluation Products, Wolfspeed|

New! CRD-02AD09N: 2.2 KW, High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with Cree's (C3MTM) SiC MOSFET (TO-263-7) Highly efficient and low cost solution of bridgeless totem-pole PFC topology based on Cree’s (C3MTM) 900 V SiC MOSFET in a TO-263-7 PackageComfortably achieve Titanium standard by having 98.5 % efficiency while THD < 5% under all load

Wolfspeed C4D10120H SiC Schottky Diode Z-Rec Rectifier

2018-07-14T17:43:55-05:00June 6th, 2018|Categories: Featured, Silicon Carbide Diodes, Wolfspeed|

An improved creepage distance makes the C4D family expansion ideal for high-voltage applications in environments with heightened levels of pollution, such as off-board battery chargers and solar inverters in urban settings. This portfolio expansion offers significant advantage for our energy and transportation customers who require increased reliability and performance in challenging outdoor settings. The

Wolfspeed 1kV SiC FETs Enable 6.6 kW Bi-Directional On-Board Charger Design

2018-07-29T14:01:24-05:00March 9th, 2018|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

6.6 kW bi-directional on-board charger design targets high-efficiency, high-power density onboard charger applications. Wolfspeed’s SiC MOSFEETs in low-inductance packaging can cut switching losses and simplify designs. The 6.6 kW design features the C3M0065100K (1 kV, 65 mΩ in TO-247-4) LEARN MORE

Evaluation Board for Cree’s SiC MOSFET in a TO-247-4 Package

2018-09-04T15:28:51-05:00March 10th, 2018|Categories: Featured, Silicon Carbide Test & Evaluation Products, Wolfspeed|

The KIT8020-CRD-5FF0917P-2 may be used to demonstrate high-speed switching performance of Cree’s 3rd Generation (C3M) silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) in a TO-247-4 package. Cree’s new TO-247-4 package provides a separate Kelvin source pin for gate drive signal return which reduces gate ringing and provides clean gate signal.