Optimized for high-voltage, high-power environments Wolfspeed’s 1700V Silicon Carbide (SiC) Schottky Diodes (introduced January 2019), incorporate advanced 5th-generation technology from Cree’s 150mm production facilities. With its complementary SiC MOSFETs, Wolfspeed offers the most comprehensive 1700V portfolio in the industry, enabling high efficiency and power density. The C5D family is intended to supersede the original
E-Series in Action: Wolfspeed Reference Designs CRD-06600FF10N: 6.6kW Bi-Directional EV On-Board Charger Demonstration of 1000 V, 65 mΩ third generation SiC MOSFET in a 6.6 kW Bi-Directional EV On-Board Charger Features include: 6.6 kW Bi-Directional EV On-Board Charger demo board consist of a Bi-Directional Totem-Pole PFC (AC/DC) stage and an Isolated Bi-Directional DC/DC
C2M Planar MOSFET Technology / N-Channel Enhancement Mode Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin
First Family of Silicon Carbide Devices to Meet Automotive AEC-Q101 Requirements The E-Series line of SiC MOSFETs is the Industry’s first automotive qualified, PPAP capable and humidity resistant MOSFET available. It features Wolfspeed’s 3rd generation rugged planar technology offering the industry’s lowest switching losses and highest figure of merit, the E-Series MOSFET is optimized
New! CRD-02AD09N: 2.2 KW, High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with Cree's (C3MTM) SiC MOSFET (TO-263-7) Highly efficient and low cost solution of bridgeless totem-pole PFC topology based on Cree’s (C3MTM) 900 V SiC MOSFET in a TO-263-7 PackageComfortably achieve Titanium standard by having 98.5 % efficiency while THD < 5% under all load
An improved creepage distance makes the C4D family expansion ideal for high-voltage applications in environments with heightened levels of pollution, such as off-board battery chargers and solar inverters in urban settings. This portfolio expansion offers significant advantage for our energy and transportation customers who require increased reliability and performance in challenging outdoor settings. The
6.6 kW bi-directional on-board charger design targets high-efficiency, high-power density onboard charger applications. Wolfspeed’s SiC MOSFEETs in low-inductance packaging can cut switching losses and simplify designs. The 6.6 kW design features the C3M0065100K (1 kV, 65 mΩ in TO-247-4) LEARN MORE
The KIT8020-CRD-5FF0917P-2 may be used to demonstrate high-speed switching performance of Cree’s 3rd Generation (C3M) silicon carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) in a TO-247-4 package. Cree’s new TO-247-4 package provides a separate Kelvin source pin for gate drive signal return which reduces gate ringing and provides clean gate signal.