GaN & SiC FEATURES
Highly Efficient SiC Power Devices for a Wide Range of Applications
This article discusses the demands of different applications, highlights the MITSUBISHI ELECTRIC SiC power devices available in different voltage and power classes and
AspenCore Book Illuminates GaN’s Pivotal Role in the New Power Era
As silicon reaches its theoretical performance limits for power electronics, the industry is shifting toward wide-bandgap materials (WBG), including gallium nitride. Why WBG,
In-Stock: Wolfspeed’s New WolfPACK™ SiC Modules Deliver Maximum Power Density
Delivering the industry’s highest power density in its class for unsurpassed efficiency, brought to you by the leaders in silicon carbide Wolfspeed’s
Microchip Next Generation 700V SiC MOSFETs – Request Samples
Features include: Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high
Evaluation of 1200 V, 300 A, SiC MOSFET Switching Performance
The use of SiC MOSFETs has been increased in modern industrial applications due to fast switching, conduction loss, and an increase in breakdown
News: GaN Systems Launches World’s First GaN Power Stage with Programmable Source Current and Overcurrent Protection
New Half-Bridge Daughter Cards Feature Renesas GaN FET Drivers GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, announced today the
Samples Available of Wolfspeed’s SiC MOSFETs and Diodes
The demand for silicon carbide (SiC) MOSFETs and diodes is growing rapidly, particularly within automotive, industrial and energy applications due to the improved
Video: Wolfspeed WolfPACK™ Baseplate-less SiC Power Modules Family
Delivering industry leading efficiency to electric vehicle fast charging and solar markets, the new Wolfspeed WolfPACK™ silicon carbide power module family enables accelerated
GaN & SiC HEADLINES
UPCOMING EVENTS
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