GaN & SiC FEATURES
GaN in Stock: 650V GaN E-HEMT Evaluation Board For Half-Bridge Topology
650 V GaN E-HEMT Daughter Board from GaN Systems GS66516T half bridge daughter board. Power level: 2.5kW The GS66516T-EVBDB daughter board
Wolfspeed 62mm BM3 Silicon Carbide Modules for High Frequency Industrial Applications
New BM3 Half-Bridge Module with Schottky Diodes Wolfspeed’s BM3 power module platform provides the system benefits of Silicon Carbide (SiC) while maintaining
Wolfspeed Selects North Carolina for World’s Largest Silicon Carbide Materials Facility
Wolfspeed to increase Materials capacity by more than 10x Silicon Carbide Materials manufacturing facility to be located in Chatham County, strategically located
Designing Robust Transistor Circuits with IGBTs and Silicon Carbide MOSFETs
RECOM White Paper When evaluating new switching transistors circuits, often only the transistor specifications are considered. However, a very significant contributor in
SiC Makes for Smarter Semi Fab/Process Power Supplies
Technical Article Semiconductor device fabrication processes have several distinct and intricate steps. Power supplies used in semiconductor fab equipment are essential for
Webinar: Build More Efficient Solar Inverters and Energy Storage Systems with SiC
Wolfspeed Webinar | Monday, September 19 | 8AM PDT / 11AM EDT / 17:00 CEST Silicon Carbide MOSFETs and Schottky Diodes are revolutionizing
Video: GaN Systems makes GaN transistors that are revolutionizing the renewable energy industry
GaN Systems is committed to a sustainable future by enabling more efficient power electronics resulting in a world defined by higher levels of
Video: Conquer High Switching Losses! Silicon Carbide MOSFETs Trounce IGBTs
When compared to silicon IGBTs, SiC MOSFETs can reduce switching losses by over 70 percent. Learn more about Microchip’s broad portfolio of SiC
GaN & SiC HEADLINES
UPCOMING EVENTS
BROCHURES & GUIDES
