Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.
- Extremely low RDS(on) – down to 2.1 mΩ per switch
- Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology
- Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch
- All die in parallel with their own gate series resistor for homogenous current balancing
- High current capability up to 600 A at very fast switching frequency; and
- Optional mix of assembly materials to better address different markets and applications.
Part # | Voltage (V) | Current Tc=80°C |
Rdson Typ Tj=25°C |
Rdson max. Tj=25°C |
---|---|---|---|---|
MSCMC120AM07CT6LIAG | 1200 | 210 A | 6.7 mΩ | 9.2 mΩ |
MSCMC120AM04CT6LIAG | 1200 | 307 A | 4.2 mΩ | 5.6 mΩ |
MSCMC120AM03CT6LIAG | 1200 | 475 A | 2.5 mΩ | 3.4 mΩ |
MSCMC120AM02CT6LIAG | 1200 | 586 A | 2.1 mΩ | 2.8 mΩ |
MSCMC170AM08CT6LIAG | 1700 | 207 A | 7.5 mΩ | 11.7 mΩ |
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