Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.

  • Extremely low RDS(on) – down to 2.1 mΩ per switch
  • Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology
  • Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch
  • All die in parallel with their own gate series resistor for homogenous current balancing
  • High current capability up to 600 A at very fast switching frequency; and
  • Optional mix of assembly materials to better address different markets and applications.
Part # Voltage (V) Current
Rdson Typ
Rdson max.
MSCMC120AM07CT6LIAG 1200 210 A 6.7 mΩ 9.2 mΩ
MSCMC120AM04CT6LIAG 1200 307 A 4.2 mΩ 5.6 mΩ
MSCMC120AM03CT6LIAG 1200 475 A 2.5 mΩ 3.4 mΩ
MSCMC120AM02CT6LIAG 1200 586 A 2.1 mΩ 2.8 mΩ
MSCMC170AM08CT6LIAG 1700 207 A 7.5 mΩ 11.7 mΩ