C2M Planar MOSFET Technology / N-Channel Enhancement Mode

Wolfspeed extends its leadership in SiC technology by introducing this new 1700V SiC discrete MOSFET in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The C2M0045170P features 45mΩ drain-source on-state resistance and is designed for rapidly evolving solar applications requiring 1500V bus capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge, making it ideally suited for solar boost converters, DC-DC applications as well as AC-AC converters.

Additional benefits include:

  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency