The SIC1182K is a single-channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. The SIC1182K boasts the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage requirements matching the range of requirements seen in SiC-MOSFETs today; key applications include UPS, photovoltaic systems, servo drives, welding inverters, and power supplies. The SIC1182K offers up to ±8 A output drive current enables the product to drive devices with nominal currents of up to 600 A (typical) without a booster stage. The device enables inverters with high system efficiency and allows the production of one design covering their entire portfolio of differently rated power inverters. A switching frequency of up to 150 kHz supports multiple applications.

  • Suitable for 600V/650V/1200V SiC MOSFET switches
  • ±8A peak gate output current

  • Integrated FluxLink™ technology providing reinforced isolation

  • Advanced Active Clamping
  • UVLO primary and secondary side
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