This article examines SiC MOSFETs as a viable option for meeting the rising demand for faster switching and greater efficiency in 1500 V solar applications. It looks at their benefits – SiC MOSFETs enable deeper integration and greater power density – and their drawbacks in terms of switching performance. The intrinsic properties of the latest generations of devices appear to inhibit performance and reliability. This article analyzes the root cause of these limitations and proposes solutions to overcome them.

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