PSDwebcast on Dynamic Rds(on) Effect on Total System Losses with GaN (May 16)
With GaN power semiconductors, previously unthinkable system innovation is now possible in diverse power-reliant industries. Reimagining the role of power in products and entire systems can impact both the immediate bottom line and long-term business competitiveness. GaN power transistors are the building blocks of change for the design of a new generation of smaller, lower cost, more efficient power systems – free from the limitations of yesterday’s silicon.
Over the past several years, power engineers have demonstrated that systems designed with GaN power transistors exhibit high efficiency and power density due to GaN’s superior switching performance. One characteristic that continues to draw attention from academia and industry is dynamic RDS(on) performance of GaN devices.
In this webinar, the following topics will be discussed:
The testing methods suggested to establish Gan’s reliability and effective.
A modified double pulse test (DPT) applied with soak time and junction temperature control
Boost converter continuous testing: Boost converter testing is important in regards to stepping up voltage from its input (supply) to its output (load).
Quantitative analysis of RDS(on) -from the perspective of heating and trapping effects
Conduction loss equation based on two factors kTj and kdr is analyzed
A system-level loss breakdown is conducted to show the percentages of each loss mechanism for GaN power transistors
Conclusion Discussion: Dynamic RDS(on) is not a significant loss factor in power system design. Compared to switching loss Eon, the loss contributed by dynamic RDS(on) has significantly less impact on the total system efficiency
Date: Thursday, May 16, 2019
Time: 11:00 AM Eastern Daylight Time
Duration: 1 hour
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