GS-065-150-1-D: 650V Enhancement Mode GaN Transistor
The GS-065-150-1-D is an enhancement mode gallium nitride (GaN) on silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. These features combine to provide very high efficiency power switching.
Ultra-low FOM Island Technology® die
Easy gate drive requirements
Transient tolerant gate drive (-20 / +10 V)
Very high switching frequency (> 10 MHz)
Fast and controllable fall and rise times
Reverse current capability
Zero reverse recovery loss
Small 12.56 x 5.60 mm PCB footprint
RoHS 6 compliant
Dual gate drive for optimized layout & paralleling
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