SiC Power MOSFET: 1200V, 16mΩ RDS[on] in TO-247-4L package

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Using the separate Kelvin source pin can further reduce switching losses by as much as 30% compared to the traditional 3-lead TO-247 package. Featuring the lowest available on-resistance combined with a low gate charge, the C3M0016120K is ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC/DC converters and chargers.

Target applications include:

  • Solar energy systems
  • EV-charging and EV-drive

  • Uninterruptible power supply (UPS)

  • SMPS

  • Motor Control and Drives

  • Energy storage

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