View Larger Image Next Generation 700V SiC MOSFETs from Microsemi Features include: Low capacitances and low gate charge Fast switching speed due to low internal gage resistance (ESR) Stable operation at high junction temperature at 175 degrees Celsius Fast and reliable body diode Superior avalanche ruggedness LEARN MORE admin2019-10-02T17:05:38-05:00October 2nd, 2019|Categories: Featured, Microsemi, Silicon Carbide Power Transistors & Modules|0 Comments Share This Story, Choose Your Platform! FacebookTwitterLinkedInEmail Related Posts Aluminum Electrolytic Capacitor Use in Three-Phase BLDC Motor Controllers Aluminum Electrolytic Capacitor Use in Three-Phase BLDC Motor Controllers October 11th, 2022 | 0 Comments Selecting and Applying Aluminum Electrolytic Capacitors for Inverter Applications Selecting and Applying Aluminum Electrolytic Capacitors for Inverter Applications October 11th, 2022 | 0 Comments Keeping Cool and Calm in Tight Environments — The GaN Way Keeping Cool and Calm in Tight Environments — The GaN Way October 10th, 2022 | 0 Comments Silicon Carbide Pulls Green Alternatives into Virtuous Cycle Silicon Carbide Pulls Green Alternatives into Virtuous Cycle October 4th, 2022 | 0 Comments SiC in Stock: 3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package SiC in Stock: 3rd Generation 1200 V, 75 mΩ SiC MOSFET in TO-263-7 Package October 2nd, 2022 | 0 Comments In Stock: 150 kVA 3-Phase Silicon Carbide Power Stack Reference Design In Stock: 150 kVA 3-Phase Silicon Carbide Power Stack Reference Design October 2nd, 2022 | 0 Comments Leave A Comment Cancel replyComment
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