Higher system efficiency and power density are enabled by the ultra-low switching energy consumption of GaN HEMTs.
In this webinar, you will:
Review the design theories and implementations the power semiconductor industry has learned and perfected over the past decade
Learn the key points to designing high-efficiency and reliable GaN-based systems
Examine the most common mistakes first-time designers make in GaN power layout
Discover the design rules and basic steps to avoid design errors that most often occur such as: oscillation, additional loss, poor EMI, parasitic turn-on/turn-off, device over stress or hard failure during switching transitions