Highly efficient ac/dc power supplies are key to the evolution of the telecom and datacom infrastructure, as power consumption grows rapidly due to hyperscale data centers, enterprise servers, or telecom switching stations. However, the power electronics industry has reached the theoretical limit of silicon MOSFETs. Meanwhile, recent gallium nitride (GaN) transistors have emerged as a high performance switch to replace silicon-based MOSFETs, offering increased energy conversion efficiency and enabling greater density. A new isolation concept with new specifications is required to address the advantages of the GaN transistors…

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