Wolfspeed Webinar: A Designer’s Guide to Silicon Carbide: Gate Drive Considerations
In high power applications, Silicon Carbide MOSFETs can enable lower losses with faster switching speeds than their silicon counterparts, and to maximize those gains you’ll need to drive them effectively. Learn more about the nuances of designing SiC gate drive circuits in the next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power: Gate Drive Considerations.
Attendees will learn about:
Gate driver selection: Similarities and differences between SiC and Si MOSFET gate drive circuits
Design considerations and how to avoid common pitfalls
Rules of thumb to maximize performance
Date: Tuesday, August 25, 2020
Time: 9:00 am PDT | 12:00 pm EDT | 6:00 pm CEST
Privacy & Cookies Policy
Necessary cookies are absolutely essential for the website to function properly. This category only includes cookies that ensures basic functionalities and security features of the website. These cookies do not store any personal information.
Any cookies that may not be particularly necessary for the website to function and is used specifically to collect user personal data via analytics, ads, other embedded contents are termed as non-necessary cookies. It is mandatory to procure user consent prior to running these cookies on your website.