In high power applications, Silicon Carbide MOSFETs can enable lower losses with faster switching speeds than their silicon counterparts, and to maximize those gains you’ll need to drive them effectively. Learn more about the nuances of designing SiC gate drive circuits in the next installment of Wolfspeed’s Designer’s Guide to Silicon Carbide Power: Gate Drive Considerations.

Attendees will learn about:

  • Gate driver selection: Similarities and differences between SiC and Si MOSFET gate drive circuits
  • Design considerations and how to avoid common pitfalls
  • Rules of thumb to maximize performance

Date: Tuesday, August 25, 2020
Time: 9:00 am PDT | 12:00 pm EDT | 6:00 pm CEST

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