This evaluation board demonstrates the switching and thermal performance of 650V SiC C3M MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology.
The board is designed for characterizing EON and EOFF losses and steady state thermal performance in SiC MOSFETs. The PCB contains AlN inserts under the MOSFETs to provide electrical isolation and optimized heat transfer to the heat sink. This design:
Demonstrates use of an AlN inlay PCB for thermal management of surface mount power devices
Serves as a PCB layout example for driving D2PAK SiC MOSFETs
Max DC Bus Voltage of 450V
Max Power of 4.2kW @ 100kHz
Optimized locations for scope probe measurements of drain current, VGS, and Vds
Predrilled thermocouple locations in the heat sink under the MOSFET
Synchronous and asynchronous buck and boost topologies supported
Kit includes two SMA and BNC adapters for measuring VGS waveforms
Includes heatsink, fan, fan guard, and thermal pads
Can be configured as full bridge DC/DC by using two evaluation boards
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