Today, most power supply roadmaps have GaN transistors incorporated into them as a key platform. The advantages of GaN transistors compared to Si MOSFETs, IGBTs, and SiC MOSFETs means engineers are extensively designing them into their systems. However, these advancements with GaN transistors in switching power supplies have also made characterizing the performance of these power supplies increasingly challenging. Measuring the high-side VGS in a half bridge, which is a traditional way to diagnose transistor cross conduction, can be a demanding task for a GaN-based design. The typical solution is to use high-cost measurement equipment, which does not always produce useful results. This article demonstrates an easy and cost-effective method using the unique characteristics of GaN transistors to measure cross conduction…

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