Designers of electrified powertrains continue to seek out WBG solutions, such as SiC MOSFETs. Though their benefits are well-known, this article provides an overview of challenges associated with SiC MOSFET characteristics in traction-inverter apps.

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These applications include on-board charging modules (OBCMs), dc-dc modules, and power inverter modules (PIMs), also known as traction inverters.

SiC MOSFETs are implemented in traction inverters due to their higher-voltage and higher-frequency capabilities, as well as their smaller die size, compared to Si IGBTs. While the benefits associated with SiC MOSFETs have been widely discussed, SiC MOSFETs must be properly understood before being adopted in e-powertrain applications. This article provides an overview of SiC MOSFET characteristics in traction-inverter applications…

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