Evaluation of 1200 V, 300 A, SiC MOSFET Switching Performance
The use of SiC MOSFETs has been increased in modern industrial applications due to fast switching, conduction loss, and an increase in breakdown voltage. With the ease of most rapid switching speeds and higher-frequency empowerment, the framework reduces the size and increases system efficiency. High-power SIC MOSFET modules are the acceptable substitution of Si IGBTs in the drive-motor system. Higher dV/dt introduces an extra load on motor winding protection due to reflected waves in situations where inverters and motors are far away from each other, which is very common for most drive-motor applications…
This article will discuss the performance of 1,200-V 300-A SiC MOSFETs and effects on their switching frequency by different variables like cable length, dead time, and output filter…
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