Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mΩ 650 V SiC MOSFETs
The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M™ SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.
Features
- 3rd Generation (C3M™) SiC MOSFET Technology
- Superior overall system level efficiency
- High frequency operation
- Robust body diode with low reverse recovery charge
- Kelvin Source connection to reduce parasitic inductance and switching losses
- Industry standard packages that meet creepage and clearance requirements
Figures of Merit
- Low on-state resistance over temperature
- Low parasitic capacitances
- Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
- Wide range of operation junction temperature
Target Applications
- Server Power Supplies
- EV Charging Systems
- Energy Storage Systems (UPS)
- Solar (PV) Inverters
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