Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mΩ 650 V SiC MOSFETs

The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M™ SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.

Features

  • 3rd Generation (C3M™) SiC MOSFET Technology
  • Superior overall system level efficiency
  • High frequency operation
  • Robust body diode with low reverse recovery charge
  • Kelvin Source connection to reduce parasitic inductance and switching losses
  • Industry standard packages that meet creepage and clearance requirements

Figures of Merit

  • Low on-state resistance over temperature
  • Low parasitic capacitances
  • Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
  • Wide range of operation junction temperature

Target Applications

  • Server Power Supplies
  • EV Charging Systems
  • Energy Storage Systems (UPS)
  • Solar (PV) Inverters
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