Wolfspeed extends its leadership in 650V SiC technology by introducing new 120 mΩ 650 V SiC MOSFETs
The 650 V SiC MOSFET portfolio is based on the latest 3rd-generation C3M™ SiC MOSFET technology, offering the widest range of on-resistances, the industry’s lowest on-state resistances in a discrete package as well as low switching losses, enabling high efficiency and power density.
3rd Generation (C3M™) SiC MOSFET Technology
Superior overall system level efficiency
High frequency operation
Robust body diode with low reverse recovery charge
Kelvin Source connection to reduce parasitic inductance and switching losses
Industry standard packages that meet creepage and clearance requirements
Figures of Merit
Low on-state resistance over temperature
Low parasitic capacitances
Robust and fast body diode with ultra-low reverse-recovery charge (Qrr)
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