Wide bandgap materials such as gallium nitride (GaN) are emerging as the technology to take electronic performance to the next level. GaN-based electronic components offer a number of important advantages over silicon devices, including more compact size, higher power density, higher efficiency, lower switching losses, and better thermal management. These factors are critical to meeting the increasingly stringent requirements associated with high-power and high-density applications, such as converters, inverters, radio frequency (RF) devices, amplifiers, power supplies and chargers…

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