Next generation SiC MOSFETs offer superior dynamic and thermal performance over conventional Si MOSFETs and IGBTs. These devices offer low capacitance and gate charge, fast switching speed, fast and reliable body diode and stable operation at high junction temperatures of 175 deg C. These features enable high efficiency with low switching and conduction losses and eliminates the need for external freewheeling diode which lowers BOM cost and circuit board space. AEC-Q101 qualified products are also available…

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