Silicon carbide (SiC), a semiconductor compound consisting of silicon (Si) and carbon (C), belongs to the wide bandgap (WBG) family of materials. Its physical bond is very strong, giving the semiconductor a high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at junction temperatures higher than those of silicon, even over 200°C. The main advantage offered by silicon carbide in power applications is its low drift region resistance, which is a key factor for high-voltage power devices…

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