Standard silicon devices are still the majority of the power electronics market at this time. While many companies are developing new circuit topologies to improve efficiency with silicon devices, particularly with three-level topologies, new silicon carbide solutions are coming forward as a new semiconductor element to meet the high power challenges of the near future. In an interview with Power Electronics News, Adam Falcsik – Product Manager, Power Devices, Mike Rogers – Applications Engineer, Power Devices, Eric Motto – Chief Engineer, Power Devices, MEUS-SDD, and Tony Sibik – VP & GDM, Power Devices, all with Mitsubishi Electric US, highlighted the importance of silicon carbide and the opportunities of the technology compared with the silicon solutions.

Efficiency improvements can be achieved with hybrid technologies that combine silicon with silicon carbide; in particular, silicon IGBTs with silicon carbide schottky barrier diodes achieve efficiency improvements with relatively minor cost increases. So, for many applications, this can be a good compromise between cost and performance. Without changing the topology, Mitsubishi Electric pointed out that the only way to significantly increase efficiency is to use silicon carbide…

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