Evaluation Board for 900V SiC C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L)

This evaluation board demonstrates the switching and thermal performance of 900V SiC C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology. The board is designed for characterizing EON and EOFF losses and steady state thermal performance in SiC MOSFETs. The PCB contains AlN inserts under the MOSFETs to provide electrical isolation and optimized heat transfer to the heat sink.

This design :

  • Demonstrates use of an AlN inlay PCB for thermal management of surface mount power devices
  • Serves as a PCB layout example for driving D2PAK SiC MOSFETs