Evaluation Board for 900V SiC C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L)
This evaluation board demonstrates the switching and thermal performance of 900V SiC C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology. The board is designed for characterizing EON and EOFF losses and steady state thermal performance in SiC MOSFETs. The PCB contains AlN inserts under the MOSFETs to provide electrical isolation and optimized heat transfer to the heat sink.
This design :
Demonstrates use of an AlN inlay PCB for thermal management of surface mount power devices
Serves as a PCB layout example for driving D2PAK SiC MOSFETs
Privacy & Cookies Policy
Necessary cookies are absolutely essential for the website to function properly. This category only includes cookies that ensures basic functionalities and security features of the website. These cookies do not store any personal information.
Any cookies that may not be particularly necessary for the website to function and is used specifically to collect user personal data via analytics, ads, other embedded contents are termed as non-necessary cookies. It is mandatory to procure user consent prior to running these cookies on your website.