The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC025SMA120B4 device is a 1200 V, 25 mOhm SiC MOSFET in a TO-247 4-lead package with a source sense.
Low capacitances and low gate charge
Reduced switching losses due to dedicated source sense pin
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = +175C
Fast and reliable body diode
Superior avalanche ruggedness
High efficiency to enable lighter, more compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need of external freewheeling diode
Lower system cost of ownership
PV inverter, converter and industrial motor drives
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