Achieve Desired Size and Switching Efficiency Without Overdesigning Your System
The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B device is a 1700 V, 750 mOhm SiC MOSFET in a TO-247 package.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance (ESR)
Stable operation at high junction temperature, TJ(max) = +175C
Fast and reliable body diode
Superior avalanche ruggedness
High efficiency to enable lighter/compact system
Simple to drive and easy to parallel
Improved thermal capabilities and lower switching losses
Eliminates the need of external freewheeling diode
Lower system cost of ownership
PV inverter, converter and industrial motor drives
Privacy & Cookies Policy
Necessary cookies are absolutely essential for the website to function properly. This category only includes cookies that ensures basic functionalities and security features of the website. These cookies do not store any personal information.
Any cookies that may not be particularly necessary for the website to function and is used specifically to collect user personal data via analytics, ads, other embedded contents are termed as non-necessary cookies. It is mandatory to procure user consent prior to running these cookies on your website.