White Paper: Gate Drives and Gate Driving with SiC MOSFETs
Latest white paper from Wolfspeed and Richardson RFPD
The use of silicon carbide (SiC) MOSFETs has enabled high-efficiency power delivery for a variety of applications, such as electric-vehicle fast charging, power supplies, renewable energy, and grid infrastructure. Although their performance is better than traditional silicon MOSFETs and insulated-gate bipolar transistors (IGBTs), the driving methods are somewhat different and must be carefully considered during the design process…
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