Enables designers to leverage low-cost GaN in applications up to 3kW
The GS-065-030-2-L is the first GaN product on the market that enables designers to get the advantages of low-cost GaN in applications up to the 3000W power level. This new part adds to the GaN Systems family of low-cost GaN transistors that empowers designers to take the next step in improved performance in efficiency, thermal management, and power density with increased design flexibility and cost effectiveness to meet new demands from consumer, industrial, and data center customers.
650 V enhancement mode power transistor
Bottom cooled, small 8 x 8 mm PDFN package
RDS(on) = 50 mOhm
IDS(max) = 30 A
Simple gate drive Requirements (0 V to 6 V)
Transient tolerant gate drive ( 20/+10 V)
Very high switching frequency (> 10 MHz)
Fast and controllable fall and rise times
Source Sense (SS) pin for optimized gate drive
Reverse conduction capability
Zero reverse recovery loss
RoHS 3 (6+4) compliant
Bridgeless Totem Pole PFC
Consumer, Industrial and Datacenter High Density Power Supply
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