Traditional silicon power transistors have been theoretically pushed to their limits. Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Limits in terms of efficiency, density, and operating temperature have been surpassed by semiconductors having wider bandgap than silicon’s 1.1 eV. The relationship between blocking voltage and RDS(on) depends on the voltage breakdown value (SiC MOSFETs’ bandgap has a value of 3.26 eV)…
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