Technical Article featuring Microchip

Silicon carbide (SiC) MOSFETs have made significant inroads in the power semiconductor industry thanks to a range of benefits over silicon-based switches. These include faster switching, higher efficiency, higher voltage operation and higher temperatures that yield smaller and lighter designs.

Those attributes have led to a range of automotive and industrial applications. But wide-bandgap devices like SiC also introduce design challenges, including electromagnetic interference (EMI), overheating, and overvoltage conditions, which can be solved by choosing the right gate driver…

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