Comparisons of transistor device models and simulation techniques illustrate which approach works best for specific design scenarios.

When designing a new system based on Gallium Nitride (GaN) power transistors, simulation provides engineers with a powerful design optimization tool. Through simulation, designers can estimate system efficiency, choose the appropriate device or topology, find suitable thermal strategies, and optimize the magnetics design. Once the design is complete, simulation also aids in system debugging.

There are three types of GaN transistor modeling in wide use: SPICE (Simulation Program with Integrated Circuit Emphasis), Analytical Loss Modeling, and PLECS (Piecewise Linear Electronic Circuit Simulation). Similarly, there are three widely used system-level simulation techniques: PLECS, Python, and Mathcad. Comparisons of transistor device models and examples of simulations offer a detailed focus on the different approaches…