New Product: 6th Generation 650V, 10A SiC Diode in QFN Package
C6D10065Q from Wolfspeed
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.
Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
Zero Reverse Recovery Current / Forward Recovery Voltage
Temperature-Independent Switching Behavior
Low Profile Package with Low Inductance
Enterprise Power, Server, & Telecom Power Supplies
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