GS66508T: for demanding high power applications

The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance & low thermal resistance in a small package. The GS66508T is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.


  • 650 V enhancement mode power transistor
  • Top-side cooled configuration
  • RDS(on) = 50 mΩ
  • IDS(max) = 30 A
  • Ultra-low FOM die
  • Low inductance GaNPX® package
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.0 x 4.5 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant


  • AC-DC Converters
  • DC-DC Converters
  • Bridgeless Totem Pole PFC
  • Inverters
  • Energy Storage Systems
  • On Board Battery Chargers
  • Uninterruptable Power Supplies
  • Solar Energy
  • Industrial Motor Drives
  • Appliances
  • Laser Drivers
  • Wireless Power Transfer