MSCSM120HM16CT3AG SiC MOSFET

Features

  • SiC Power MOSFET
    • Low RDS(on)
    • High temperature performance
  • Silicon carbide (SiC) Schottky diode
    • Zero reverse recovery
    • Zero forward recovery
    • Temperature-independent switching behavior
    • Positive temperature coefficient on VF
  • Low stray inductance
  • Internal thermistor for temperature monitoring
  • Aluminum nitride (AlN) substrate for improved thermal performance

Benefits

  • High power and efficiency converters and inverters
  • Outstanding performance at high-frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant

Applications

  • Uninterruptible power supplies
  • Switched mode power supplies
  • EV motor and traction drive
  • Welding converters
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