GS-EVB-BTP-3KW-GS: Using GaN E-HEMTs
This 3kW reference design demonstrates the operating principle and design considerations of a Bridgeless Totem Pole PFC circuit (BTPPFC) using GaN Systems’ GS66516B 650V GaN transistors.
Description
- Documentation only. No hardware
- Continuous conduction mode (CCM) BTP PFC reference design
- Digital power control
- 90-264 Vrms Universal input
- 3 kW power (1.5 kW at low line), 400 Vdc output
- 99% peak efficiency, 0.99 power factor
- Small form factor, 127 x 124 x 40 mm
Features
- High power density: 78 W/in3
- GSP66516BHB-EVBIMS2 Insulated Metal Substrate based design
- Excellent thermal performance
- Low cost implementation
- EMI compliant (EN55033 Class A CE)
- Includes surge protection, auxiliary power and fan cooling
- Robust, 1MHz bandwidth sensing, cycle-by-cycle current control
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