GS-EVB-BTP-3KW-GS: Using GaN E-HEMTs

This 3kW reference design demonstrates the operating principle and design considerations of a Bridgeless Totem Pole PFC circuit (BTPPFC) using GaN Systems’ GS66516B 650V GaN transistors.

Description

  • Documentation only. No hardware
  • Continuous conduction mode (CCM) BTP PFC reference design
  • Digital power control
  • 90-264 Vrms Universal input
  • 3 kW power (1.5 kW at low line), 400 Vdc output
  • 99% peak efficiency, 0.99 power factor
  • Small form factor, 127 x 124 x 40 mm

Features

  • High power density: 78 W/in3
  • GSP66516BHB-EVBIMS2 Insulated Metal Substrate based design
  • Excellent thermal performance
  • Low cost implementation
  • EMI compliant (EN55033 Class A CE)
  • Includes surge protection, auxiliary power and fan cooling
  • Robust, 1MHz bandwidth sensing, cycle-by-cycle current control
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