In Stock: Half-Bridge Gate Drive Evaluation Kit for Hitachi Energy’s RoadPak IGBT/SiC Modules
Featuring the GD3160
NXP’s FRDMGD31RPEVM is a half-bridge evaluation kit populated with two GD3160 single channel IGBT/SiC MOSFET gate drive devices. The kit includes the Freedom KL25Z microcontroller hardware for interfacing a PC installed with Flex GUI software for communication to the SPI registers on the MC33GD3160 gate drive devices in either daisy chain or standalone configuration.
The GD3160 translator board is used to translate 3.3 V signals to 5.0 V signals between the MCU and MC33GD3160 gate drivers.
FRDMGD31RPEVM originally populated with GD3100, has been updated with GD3160 gate drive devices.
Compatible with RoadPak SiC MOSFET module
Flex GUI available for use with kit
Daisy chain SPI interface configurability
Easy to configure jumper options
SPI configurable register options using Flex GUI
Double pulse and short circuit evaluations
Fiber optic connections for external PWM inputs
Designed to connect to a single phase of a RoadPak SiC MOSFET module for half-bridge evaluations and applications development
The FRDMGD31RPEVM kit contents include:
Assembled and tested FRDMGD31RPEVM board in an anti-static bag
3.3 V to 5.0 V translator board (KITGD316xTREVB) connected to FRDM-KL25Z
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