Bodo’s Power – Eliminating Power Conversion Trade-Offs by Moving to 1700V SiC MOSFETs
Designers of high-voltage power systems have struggled to meet customers’ needs for continued innovation when using silicon MOSFETs and IGBTs. The desired reliability is often not possible without sacrificing efficiency, nor can silicon-based solutions meet today’s challenging size, weight and cost requirements. With the arrival of high-voltage silicon carbide (SiC) MOSFETs, however, designers now have an opportunity to improve performance while solving all the other challenges.
Today’s 1700V SiC products build on the success of SiC power devices rated from 650V to 1200V that have seen growing adoption over the past 20 years. The technology has already enabled significant advancements to end equipment; and now, with power devices rated at 1700V, it is extending SiC technology’s myriad benefits into new end market segments, including electrified commercial and heavy-duty vehicles, light rail traction and auxiliary power, renewable energy, industrial drives, and more. Designers can maximize the benefits offered by 1700V SiC MOSFETs with the right power packaging and proper gate driving. This increases their advantages over the incumbent silicon solutions across the widest possible range of power levels.
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