View Larger Image Application Note: Gate Driver Circuit Design with GaN E-HEMTs This GaN Systems application note shows why GaN HEMTs are simple to drive. (March 2022 updated version.) DOWNLOAD NOW! admin2022-06-13T11:38:20-05:00June 12th, 2022|Categories: Application Note, Featured, GaN Systems|0 Comments Share This Story, Choose Your Platform! FacebookTwitterLinkedInEmail Related Posts GaN in Stock: 100W GaN Power Amplifier for Wireless Power Applications GaN in Stock: 100W GaN Power Amplifier for Wireless Power Applications July 4th, 2022 | 0 Comments SiC in Stock: 1200V, 40mΩ SiC MOSFET in TO-247-4-lead package with a Source Sense SiC in Stock: 1200V, 40mΩ SiC MOSFET in TO-247-4-lead package with a Source Sense July 4th, 2022 | 0 Comments Wolfspeed 1200V & 1700V Half-Bridge SiC Modules Designed for Ultra-High Power Density Wolfspeed 1200V & 1700V Half-Bridge SiC Modules Designed for Ultra-High Power Density July 4th, 2022 | 0 Comments SiC in Stock: 1200V, 35A Silicon Carbide Power Module, Compact and Low Inductive Design with Integrated Capacitors SiC in Stock: 1200V, 35A Silicon Carbide Power Module, Compact and Low Inductive Design with Integrated Capacitors June 26th, 2022 | 0 Comments GaN Systems Launches New Higher Performance, Low-Cost Transistor for Consumer, Industrial, and Data Center Applications GaN Systems Launches New Higher Performance, Low-Cost Transistor for Consumer, Industrial, and Data Center Applications June 26th, 2022 | 0 Comments SiC in Stock: 1700V/353A Phase Leg Silicon Carbide Module SiC in Stock: 1700V/353A Phase Leg Silicon Carbide Module June 21st, 2022 | 0 Comments Leave A Comment Cancel replyComment
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