GS-065-060-5-T-A-MR: Offers very low junction-to-case thermal resistance

The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology and GaNPX packaging. Island Technology cell layout realizes high-current die and high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-5-T-A is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

Features

  • AEC-Q101 and AutoQual+ (Enhanced-AEC-Q101)
  • 650 V enhancement mode power transistor
  • Top-cooled, low inductance GaNPX package
  • RDS(on) = 25 mOhm
  • IDS(max) = 60 A
  • Ultra-low FOM
  • Simple gate drive requirements (0 V to 6 V)
  • Transient tolerant gate drive (-20 / +10 V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Small 9 x 7.6 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 3 (6+4) compliant

Applications

  • On Board Chargers
  • Traction Drive
  • DC-DC Converters
  • Industrial Motor Drives
  • Solar Inverters
  • Bridgeless Totem Pole PFC
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