GaN in Stock: Automotive-grade 650 V, 25 mΩ GaN E-HEMT
GS-065-060-5-T-A-MR: Offers very low junction-to-case thermal resistance
The GS-065-060-5-T-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology and GaNPX packaging. Island Technology cell layout realizes high-current die and high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS-065-060-5-T-A is a top-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
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