GaN in Stock: 650V GaN E-HEMT Evaluation Board For Half-Bridge Topology
650 V GaN E-HEMT Daughter Board from GaN Systems
GS66516T half bridge daughter board. Power level: 2.5kW
The GS66516T-EVBDB daughter board consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (part number GS66516T) and all necessary circuits including half bridge gate drivers, isolated power supplies and optional heatsink to form a functional half bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half bridge-based topology, either with the universal motherboard or the users’ own system design.
Serves as a reference design and evaluation tool as well as deployment-ready solution for easy insystem evaluation
Vertical mount style with height of 35mm, which fits in majority of 1U design and allows evaluation of GaN E-HEMT in traditional through-hole type power supply board
Current shunt position for switching characterization testing
Universal form factor and footprint for all products
Note: This part should be purchased with GS665MB-EVB
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