Part of our Tech Chat series Why negative gate driving voltage? In this Tech Chat, we discuss the different gate drive levels of Wolfspeed Gen3 SiC MOSFETs - how adding negative gate bias improves noise immunity, avoiding false turn-on in a half bridge configuration and the recommendation to use negative voltage for a Totem
In-stock now at Richardson RFPD The new 6th generation (C6D) 650 V SiC Schottky diode family is based on Wolfspeed’s innovative, robust and reliable 150 mm SiC wafer technology. The latest C6D technology offers lowest forward voltage drop (VF = 1.27 V @ 25°C) that have a significant impact on the reduction of
Electric vehicles (EVs) will gain more and more market share, eventually taking over internal combustion engine vehicles. Direct current (dc) fast charging stations will replace, or integrate, petrol stations. Renewable energies will be used to power them, such as solar and wind. People will desire to charge their EVs in less than 15 minutes and
In this webinar, GaN Systems reviews practical system designs with GaN, demonstrating EMI, surge, thermal, and drive circuit performance. Examples illustrate that proper system design meets desired system requirements.In this webinar, you'll learn:EMI and high frequency are compatible; solution designs and application examples providedSurge requirements and standards reviewed with GaN design examplesThermal solutions reviewed for
5G is the latest-generation network that is poised to power the IoT. Networks running 5G will be up to 20× faster than the existing 4G network, enabling video download speeds up to 10× faster. High-performance power semiconductors such as gallium nitride (GaN), silicon carbide (SiC), and gallium arsenide (GaAs) are playing a key role in
Part of our Tech Chat series Commode Mode Transient Immunity as it relates to gate drivers is explained in this Tech Chat as well as the minimum gate driver CMTI required for converters integrated with Gallium Nitride (GaN) or Silicon Carbide (SiC) power semiconductors. CM Transients can affect gate driver timing and performance. Incorrect gate
Optical isolated probe for the diagnosis of cross-conduction In order to carry out the process of diagnosis of cross-conduction or potential cross-conduction, the easiest and most authentic way is to check the deadtime with the help of two probes, existing at the extreme sides (high- and low-side driving signals) simultaneously. Various challenges are associated with
Evaluation Board for 900V SiC C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L) This evaluation board demonstrates the switching and thermal performance of 900V SiC C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology. The board is designed for characterizing EON and EOFF losses and steady state thermal performance in SiC MOSFETs.
GaN Systems CEO Jim Witham writes on the widening chasm between early adopter and the mainstream, and how to bridge it. Addressing the challenges that technology companies face in moving from early adopters to mainstream customers has been a topic of conversation among entrepreneurs since Geoffrey Moore wrote “Crossing the Chasm” 30 years ago. That
Orlando Esparza hosts subject matter experts Steven Chenetz and Avi Kashyap to discuss Silicon Carbide as an emerging technology and to demonstrate the Intelligent Configuration Tool’s capabilities. Microchip provides unrivaled SiC MOSFET avalanche and short circuit ruggedness, alongside total system solutions designed to streamline your SiC development – from benchtop to production. Only Microchip unifies
