Now that silicon carbide has been established as a transformative technology, many power designers are focusing on SiC device level qualification, reliability and consistency of supply. Wolfspeed is leading the pack with comprehensive proven product reliability across its entire vertical supply chain, ensuring that the unprecedented market demand for SiC can be realized throughout the
Current trends in electrification are placing increasing demands on the power electronics for improved efficiency, higher power capability and higher power density. Since these demands apply to systems, the requirements extend down to the component level. Silicon carbide (SiC) is poised to rapidly replace silicon (Si) in many applications due to the higher performance characteristics
Evaluation platform and associated documentation from GaN Systems GaN E-HEMT fast switching, low Coss, and zero QRR enables a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent reference design for implementing a high performance, low cost audio system. The Class D amplifier and companion power supply designs
Today, multiple silicon carbide (SiC) device suppliers update their growing product catalogs every few months. As options increase, the next challenge facing the widespread adoption of SiC is the design-in process. Using these fast-switching components requires a multifaceted, holistic solution involving the semiconductor die, package, gate driver, and the interactions of all three technologies. This
GaN transistors are increasingly used in various fields: in the automotive sector, for the supply of electrical power, and for the conversion and use of current. These components will soon replace their respective predecessors. This article takes a look at how to better manage the different operating conditions, including critical ones, in order to optimize
Check out this interactive block diagram and demos of programmable SiC gate drivers from Microchip. Just click on the items on the landing page to access videos, configuration tools and more. GET STARTED
Today, most power supply roadmaps have GaN transistors incorporated into them as a key platform. The advantages of GaN transistors compared to Si MOSFETs, IGBTs, and SiC MOSFETs means engineers are extensively designing them into their systems. However, these advancements with GaN transistors in switching power supplies have also made characterizing the performance of these
In this system, a boost converter charges the battery in Electric Vehicles (EV). A conventional OBC (onboard charging system) has a bridge rectifier to convert the input AC voltage to DC but, during the rectification process, there is high conduction, and switching losses and heating issues are also attached to it. Interleaved topologies are
Advantages with GaN Systems – A Comparative Look This whitepaper covers:Class-D Amplifier Transistor ApproachesDevice parameters and characteristicsPerformanceEase of ManufacturingApplication Circuit Layout Read More!
The race for power conversion efficiency over 99% continues. New innovative topologies are competing with the standard half-bridge topology using SiC and GaN semiconductor technologies. Requirements for high-efficient power conversion both unidirectional and bidirectional are getting standard in the wide field of applications ranging from EV battery chargers, solar inverters and UPS to industrial
