WEBINAR: April 7th 20209am PDT | 5pm GMT | 6pm CET The webinar compares GaN E-HEMT with Silicon and SiC MOSFETs in a Power Supply Unit (PSU) with Bridgeless Totem Pole PFC and LLC resonant converter topologies. The presentation concludes that GaN E-HEMT solutions provide higher efficiency than SiC and 40% higher power density than
Breakthrough Technology Combines High Performance With Low Losses Silicon Carbide (SiC) semiconductors provide an innovative option for power electronic designers looking for improved system efficiency, smaller form factor and higher operating temperature in products covering industrial, transportation/automotive, medical, aerospace/aviation, defense and communcation market segments. Our next-generation SiC MOSFETs and SiC SBDs are designed with
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 package. Features:Low capacitances and low gate chargeFast switching speed due to
Designed for use with Cree’s High-Performance CGD12HBXMP and CGD15HB62LP Single-Ended Inputs for Interfacing with 3.3 V or 5 V Microcontrollers Differential Outputs for Increased Noise Immunity High-Frequency, Ultra-Fast Switching Operation Fault Indicator LEDs Reverse Polarity and Overvoltage Protections Enables Retrofitting Single-Ended Systems for Differential Signals LEARN MORE! ASK
March 2020 update now available! As power conversion applications rapidly transition to GaN and SiC technologies, Richardson RFPD can help you in your integration plans with our broad selection of GaN and SiC resources to help speed your time to market. Download Now
March 2020 update! Richardson RFPD's expanded product selection guide for GaN, SiC and additional associated products is now available. Download Now
New flowNPC 2 modules feature max power density, outstanding efficiency with SiC hybrid modules for 1500 V solar inverters Featuring a combination of SiC diodes with the latest 950 V IGBTs, the new flowNPC 2 for 1500 V multi-string inverters supports 200 kVA and higher output power. Higher efficiency and better power handling –
GS-EVB-AUD-BUNDLE1-GS: Bundle: Amp + SMPS GaN E-HEMT fast switching, low Coss, and zero Qrr enables a new level of performance for Class D Audio amplifiers. This GaN-based EVB platform provides an excellent reference design for implementing a high performance, low cost audio system. The Class D amplifier and companion power supply are optimized for sound
The CRD3DD12P buck boost evaluation kit is optimized to demonstrate the high-speed switching capability of Wolfspeed’s 3rd Generation (C3M) silicon carbide (SiC) MOSFETs. The board features SMA connectors for monitoring the gate to source voltage. The SMA connectors offer much cleaner waveforms than traditional probes and ground leads. This evaluation kit supports 4-lead and 3-lead
3000 series coldplate for the Wolfspeed XM3 module The CP3012 aluminum friction stir welded coldplate has been optimized specifically for the high heat flux of silicon carbide. The MDT (micro deformation technology) inside allows for the very low thermal resistance, low pressure drop and balanced parallel flow. LEARN MORE!
