GaN Systems' GS-065-060-5-B-A is designed to meet automotive reliability standards including AEC-Q101 qualification and GaN Systems’ AutoQual+ testing and qualification which is based on the company’s collaboration with automotive partners to prove its transistors lifetimes exceed market requirements. The new GaN transistor provides low RDS(on) (25 mOhm) and features a 60A IDS rating and
What comes to mind when you think of a ‘Portable Power Station’? A bulky and heavy machine that is loud, yet underpowered. A machine that frustrates customers. Customers have had to use internal combustion engine (ICE) generators that are typically loud, large and heavy, and cannot be used indoor. Contrast this with electric systems that
The MSC015SMA070B increases performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. Features:Low capacitances and low gate chargeFast switching speed due to low internal gate resistance (ESR)Stable operation at high junction temperature, TJ(max) = +175CFast and reliable body diodeSuperior avalanche ruggednessRoHS CompliantBenefits:High efficiency to enable lighter,
Wolfspeed's WAB400M12BM3 Half-Bridge Module for Switching & Conduction Optimized ApplicationsWolfspeed’s 62mm power module platform provides the system benefits of SiC, while maintaining the robust, industry-standard 62 mm module package. The internal design of Wolfspeed’s 62mm BM package enables high speed SiC switching benefits, due to the low-inductance layout. The BM platform is a perfect fit
Technical Article from Flex Power Modules Data center performance is climbing, but at the same time, systems are becoming more compact, while demands for 24x7 uptime and growing security threats create their challenges. All the while, there are downward pressures on electricity consumption. For power system design engineers, this may at first appear an unassailable
GS-EVM-3PH-650V300A-SM1 from GaN Systems This GS-EVM-3PH-650V300A-SM1 evaluation module is a 650 V 300 A 3-Phase GaN power module designed to meet high robustness, high power density, and low-cost requirements of the automotive and industrial markets.FeaturesIncludes 12 GS-065-150-1-D (650V 150A E-mode Die)Industry standard form factorHigh thermal conductivity base plateOptimized isolated gate driver board availableUltra-low switching losses
Wolfspeed's CAS480M12HM3 Wolfspeed has developed the HM power module platform to provide the benefits of SiC in power density sensitive applications, while maintaining the baseplate compatibility of a 62mm module. The HM platform’s SiC optimized packaging enables 175°C continuous junction operation, with a high-reliability Silicon Nitride (Si3N4) power substrate to ensure mechanical robustness under extreme
GaN Systems Workshop for IEEE Wireless Power Week 2021 There is still another cord to cut: Power. But the current low frequency wireless power transfer (WPT) technology is low power, slow charging and low efficiency – this will not advance the market. Paul Wiener presents a workshop for IEEE Wireless Power Week 2021 on the
Part of our Tech Chat series Mitigating EMC in GaN power circuits does not require extra design efforts. In fact, the EMC performance and solutions of GaN are very similar to silicon MOSFETs. Learn more in this Tech Chat with GaN Systems. MORE TECH CHAT!
Bonitron M5628 Chargers maintain energy levels in batteries and ultracapacitors. Can also be used as a DC power supply. Features include adjustable current limit and charge voltage, digital display, and isolated status contacts...
