The demand for silicon carbide (SiC) MOSFETs and diodes is growing rapidly, particularly within automotive, industrial, and energy applications due to the improved efficiency, superior power density, and lower system costs. Learn how to approach your design correctly, make all the right considerations and select the optimum SiC MOSFET for your system from the
Evaluate and optimize the steady state and high speed dynamic switching performance of Wolfspeed’s latest (C3M™) 650V SiC MOSFETs and 6th Generation 650 V SiC Schottky diodes. Analyze the evaluation board in versatile power conversion topologies, such as Synchronous / Asynchronous Buck or Boost converter, Half Bridge and Full Bridge (Please note: Full
eeDesignIt interviews Jim Witham, CEO of GaN Systems GaN is changing the way we power things, and that’s becoming increasingly evident whether you look at consumer, automotive, 5G, or industrial power applications. Take 5G — It’s high bandwidth and low latency. From the consumer standpoint, that means fast video downloads with no lag.
Available in a low inductance flow 1 housing and tailored for 1500 V solar inverters, they are ideal for systems up to 40 kW at 20 kHz. Making the right design choices is critical to a products success in the market. Vincotech‘s latest additions to its family of dual boost modules for 1500V
The EVAL-ADuM4135EBZ supports the ADuM4135 advanced isolated gate driver. Because the evaluation board has footprints for insulated gate bipolar transistors (IGBTs) and metal oxide semiconductor field effect transistors (MOSFETs) in TO-252, TO-220, and 0.100” spaced lead packages, the ADuM4135 can be evaluated with many different power devices. The EVAL-ADuM4135EBZ comes with footprints to facilitate
Wide-bandgap materials such as gallium nitride (GaN) have emerged as technologies to take electronic performance to the next level. So, what’s “real” about GaN and what’s a myth? Read More!
Lowest conduction and switching losses in the industry, enabling smaller, lighter and highly efficient power conversion Wolfspeed’s 3rd Generation 650V MOSFET technology is optimized for high performance power electronics applications, including server power suppliers, electric vehicle charging systems, energy storage systems, UPS, solar (PV) inverters and consumer electronics.
Breakthrough Technology Combines High Performance With Low Losses SiC Module Advantages: High-speed switching Low switching losses Low-input capacitance High-power density Low-profile packages Minimum parasitic inductance Lower system cost Standard and custom modules 30+ years design experience LEARN MORE ASK
2.2 kW High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with SiC MOSFET CRD-02AD065N reference design features and benefits: Highly efficient and low cost solution of 2.2 kW bridgeless totem-pole PFC topology based on Cree’s latest (C3M™) 650 V 60 mΩ SiC MOSFETs Comfortably achieve Titanium standard by having > 98.5% efficiency while THD <
6.6kW High Power Density Bi-Directional EV On-Board Charger The CRD-06600FF065N is a demonstration of Wolfspeed's 650 V, 60 mOhm (C3M) SiC MOSFETs in a 6.6 kW Bi-Directional converter targeting high efficiency and high power density on-board charging applications.The demo board consists of a bi-directional totem pole PFC (AC/DC) stage and an isolated bi-directional DC/DC stage
