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Microchip SiC Power Modules for Aircraft Electrical Systems

2021-12-21T17:10:53-06:00December 21st, 2021|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Enabling More Efficient and Compact Power Conversion In the race to reduce emissions in aerospace systems, designers are increasingly moving towards more efficient electronics in control systems, including those that replace pneumatics and hydraulics–everything from onboard alternators to actuators and auxiliary power units.Microchip Technology, working with European Commission consortium member Clean Sky, has developed a

Wolfspeed Expands WolfPACK™ with Higher-current 1200V Solutions

2021-12-21T14:44:59-06:00December 21st, 2021|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

Delivering the industry’s highest power density in its class for unsurpassed efficiency, brought to you by the leaders in silicon carbide Wolfspeed’s latest power modules enable multiple configurations across power levels for electric vehicle fast charging, industrial power, UPS, induction heating and welding, industrial motor drive, power supply, solar and renewable energy and grid

GaN in Stock: GaN Systems 650V, 60A, 25mΩ Power Transistor

2021-12-15T12:03:33-06:00December 15th, 2021|Categories: Featured, GaN Power Transistors, GaN Systems|

GS66516T: for demanding high power applications The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a

SiC in Stock: Microchip 1200V/394A phase leg module in D3 package

2021-12-14T17:42:22-06:00December 14th, 2021|Categories: Featured, Microchip, Silicon Carbide Power Transistors & Modules|

Microchip MSCSM120AM042CD3AG Features SiC Power MOSFET Low RDS(on) High temperature performance Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independent switching behavior Positive temperature coefficient on VF Kelvin emitter for easy drive High level of integration Aluminum nitride (AlN) substrate for improved thermal performance M6 power connectors Benefits High efficiency converters

SiC In Stock: Wolfspeed 650V, 15mΩ Silicon Carbide MOSFET

2021-12-14T12:55:53-06:00December 14th, 2021|Categories: Featured, Silicon Carbide Power Transistors & Modules, Wolfspeed|

in 4-lead TO-247 Package The industry's lowest on-state resistances and switching losses for maximum efficiency and power densityWolfspeed extends its SiC technology leadership with the introduction of 3rd-Generation 650V MOSFETs, enabling smaller, lighter and highly-efficient power conversion in an even wider range of power systems. The 650V MOSFET product family is ideal for applications including

WBG Devices: The gamechangers in high efficiency solutions

2021-12-13T13:00:24-06:00December 13th, 2021|Categories: Analog Devices, Events, Featured, Webinar, Wolfspeed|

Webinar featuring Analog Devices and Wolfspeed Reliable, highly efficient power conversion is crucial to meet the requirements of the energy transition and e-mobility. Experts will give insights into the current status of wide bandgap devices. These are the central topics that will be discussed at the web conference on December 14, 2021 | 2:00

Technical Guide: Supercapacitor Overview

2021-12-17T10:38:56-06:00December 17th, 2021|Categories: Cornell Dubilier, Featured Supercapacitors, Supercapacitor Article|

Download this technical guide to learn about supercapacitor construction, typical applications, determining the correct supercapacitor for a given application, equivalent circuit, measuring the capacitance of supercapacitors, leakage current, life expectancy calculation, soldering guidelines, cell balancing, and lead bending recommendations.

Selecting the Right Semiconductor Technology for High Power Designs

2021-12-07T17:01:41-06:00December 7th, 2021|Categories: Featured, Webinar, Wolfspeed|

Wolfspeed webinar | December 16 Power designers in the 21st century have an abundance of options when selecting switching elements for their designs. The emergence of Wide Bandgap (WBG) semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN), along with improvements in existing Si technology, allows better pairing of semiconductor materials for each

SiC In Stock: 1200V, 16mΩ SiC Module in Compact, Low-inductive Design

2021-12-07T14:42:58-06:00December 7th, 2021|Categories: Featured, Silicon Carbide Power Transistors & Modules, Vincotech|

from Vincotech Features: Compact and low inductive design High frequency SiC MOSFET Integrated NTC Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up Convex shaped substrate for superior thermal contact Compact design CTI600

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