This Wolfspeed paper presents a SiC MOSFET-based 6.6 kW bi-directional Electric Vehicle (EV) on-board charger (OBC), with high efficiency and high power density. A digital controlled prototype with a switching frequency of 67kHz for CCM totem pole PFC, and 150kHz-300kHz for a CLLC resonant converter is demonstrated with 54W/in3 power density exceeding 96.5% in peak
This GaN Systems application note shows why GaN HEMTs are simple to drive.(February 2021 updated version.) DOWNLOAD NOW!
Switching a SiC MOSFET Power Module creates two significant problems that need to be addressed in order to optimize the performance of the device: turn-off voltage overshoot and ringing. These two parasitic problems need to be controlled while maintaining efficient switching. Microchip's AgileSwitch® line of patented Gate Drive products address these problems, controlling the turn-off
GaN Systems' EZDrive(SM) circuit is a low cost, easy way to implement a GaN driving circuit. It is adaptable to any power level, any frequency, and any LLC and PFC controller. The EZDrive(SM) circuit provides design control for the optimization of efficiency and EMI. The EZDrive(SM) circuit allows the use of a standard MOSFET