Application Note: 6.6kW High Power Density Bi-directional EV On-Board Charger

2021-04-19T14:09:00-05:00April 19th, 2021|Categories: Application Note, Featured, GaN Systems, Wolfspeed|

This Wolfspeed paper presents a SiC MOSFET-based 6.6 kW bi-directional Electric Vehicle (EV) on-board charger (OBC), with high efficiency and high power density. A digital controlled prototype with a switching frequency of 67kHz for CCM totem pole PFC, and 150kHz-300kHz for a CLLC resonant converter is demonstrated with 54W/in3 power density exceeding 96.5% in peak

Characterization of a 62mm SiC Power Module with AgileSwitch Augmented Switching Gate Drivers

2021-01-13T17:00:22-06:00January 13th, 2021|Categories: Application Note, Featured, Microchip|

Switching a SiC MOSFET Power Module creates two significant problems that need to be addressed in order to optimize the performance of the device: turn-off voltage overshoot and ringing. These two parasitic problems need to be controlled while maintaining efficient switching. Microchip's AgileSwitch® line of patented Gate Drive products address these problems, controlling the turn-off

Application Note: EZDrive Solution for GaN Systems’ E-HEMT

2019-07-31T16:51:22-05:00March 1st, 2019|Categories: Application Note, Featured, GaN Systems|

GaN Systems' EZDrive(SM) circuit is a low cost, easy way to implement a GaN driving circuit. It is adaptable to any power level, any frequency, and any LLC and PFC controller. The EZDrive(SM) circuit provides design control for the optimization of efficiency and EMI. The EZDrive(SM) circuit allows the use of a standard MOSFET

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